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IPB80N06S4L05ATMA1
Product Overview
Category
The IPB80N06S4L05ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Package
The IPB80N06S4L05ATMA1 is typically available in a TO-263 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- On-State Resistance (RDS(on)): 5.4mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 110nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S4L05ATMA1 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-handling capacity
- Low conduction losses
- Enhanced thermal performance
- Compatibility with various driving circuits
Advantages
- Efficient power dissipation
- Reduced heat generation
- Improved system reliability
- Suitable for high-frequency applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD) events
Working Principles
The IPB80N06S4L05ATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.
Detailed Application Field Plans
The IPB80N06S4L05ATMA1 is widely used in the following applications: - Switched-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB80N06S4L05ATMA1 include: - IRF840 - FDP8870 - STP80NF03L - AUIRFN8403
In conclusion, the IPB80N06S4L05ATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications across various industries.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB80N06S4L05ATMA1 v technických řešeních
What is the maximum drain-source voltage of IPB80N06S4L05ATMA1?
- The maximum drain-source voltage of IPB80N06S4L05ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S4L05ATMA1?
- The continuous drain current rating of IPB80N06S4L05ATMA1 is 80A.
What is the on-resistance of IPB80N06S4L05ATMA1?
- The on-resistance of IPB80N06S4L05ATMA1 is typically 6mΩ at Vgs=10V.
What is the gate threshold voltage of IPB80N06S4L05ATMA1?
- The gate threshold voltage of IPB80N06S4L05ATMA1 is typically 2V.
What is the power dissipation of IPB80N06S4L05ATMA1?
- The power dissipation of IPB80N06S4L05ATMA1 is 300W.
What are the typical applications for IPB80N06S4L05ATMA1?
- IPB80N06S4L05ATMA1 is commonly used in motor control, battery protection, and power management applications.
What is the operating temperature range of IPB80N06S4L05ATMA1?
- The operating temperature range of IPB80N06S4L05ATMA1 is -55°C to 175°C.
Does IPB80N06S4L05ATMA1 have built-in ESD protection?
- Yes, IPB80N06S4L05ATMA1 has built-in ESD protection.
What is the package type of IPB80N06S4L05ATMA1?
- IPB80N06S4L05ATMA1 comes in a TO-263-3 package.
Is IPB80N06S4L05ATMA1 RoHS compliant?
- Yes, IPB80N06S4L05ATMA1 is RoHS compliant.