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IPD053N06N3GBTMA1
Product Overview
Category
The IPD053N06N3GBTMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in various electronic devices and circuits for switching and amplification purposes.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Enhanced thermal performance
Package
The IPD053N06N3GBTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is usually supplied in reels with a specific quantity per reel, as per the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): [specification]
- Continuous Drain Current (ID): [specification]
- On-Resistance (RDS(on)): [specification]
- Gate-Source Voltage (VGS): [specification]
- Total Gate Charge (Qg): [specification]
- Operating Temperature Range: [specification]
Detailed Pin Configuration
The IPD053N06N3GBTMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- High voltage capability allows for use in various applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- Enhanced thermal performance
- Low gate charge
- Suitable for high voltage applications
Disadvantages
- May require additional circuitry for certain applications
- Sensitivity to static electricity
Working Principles
The IPD053N06N3GBTMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD053N06N3GBTMA1 is widely used in: - Power supplies - Motor control - Lighting systems - Audio amplifiers - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the IPD053N06N3GBTMA1 include: - IPD053N06N3G - IPD053N06N3GATMA1 - IPD053N06N3GXTMA1
In conclusion, the IPD053N06N3GBTMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD053N06N3GBTMA1 v technických řešeních
What is the maximum drain-source voltage of IPD053N06N3GBTMA1?
- The maximum drain-source voltage of IPD053N06N3GBTMA1 is 60V.
What is the continuous drain current rating of IPD053N06N3GBTMA1?
- The continuous drain current rating of IPD053N06N3GBTMA1 is 75A.
What is the on-resistance (RDS(on)) of IPD053N06N3GBTMA1?
- The on-resistance (RDS(on)) of IPD053N06N3GBTMA1 is typically 5.3mΩ at VGS = 10V.
What is the gate threshold voltage of IPD053N06N3GBTMA1?
- The gate threshold voltage of IPD053N06N3GBTMA1 is typically 2V.
What is the operating temperature range of IPD053N06N3GBTMA1?
- The operating temperature range of IPD053N06N3GBTMA1 is -55°C to 175°C.
Is IPD053N06N3GBTMA1 suitable for automotive applications?
- Yes, IPD053N06N3GBTMA1 is designed for automotive applications and meets AEC-Q101 standards.
Does IPD053N06N3GBTMA1 have built-in ESD protection?
- Yes, IPD053N06N3GBTMA1 features built-in ESD protection.
What package type does IPD053N06N3GBTMA1 come in?
- IPD053N06N3GBTMA1 is available in a TO-252-3 (DPAK) package.
Can IPD053N06N3GBTMA1 be used in high-frequency switching applications?
- Yes, IPD053N06N3GBTMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
Is there a recommended gate driver for IPD053N06N3GBTMA1?
- While specific recommendations may vary based on the application, generally, a gate driver capable of providing sufficient drive voltage and current for the MOSFET would be suitable for use with IPD053N06N3GBTMA1.