IPD5N03LAG

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other electronic devices
• Characteristics: Low on-state resistance, high switching speed, low gate charge
• Package: TO-252-3 (DPAK)
• Essence: High-performance power MOSFET for efficient power management
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 50A
• RDS(ON): 5.3mΩ
• Gate Charge: 18nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low on-state resistance for minimal conduction losses
• Fast switching speed for improved efficiency
• Low gate charge for reduced drive requirements
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High efficiency
• Reliable performance
• Suitable for high-frequency applications

Disadvantages

• Sensitive to voltage spikes
• Requires careful handling during installation

Working Principles

The IPD5N03LAG operates based on the principles of field-effect transistors, utilizing its low on-state resistance and fast switching speed to efficiently control power flow in various electronic circuits.

Detailed Application Field Plans

1. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
2. Motor Control: Integrated into motor drive circuits for precise control and energy savings.
3. Electronic Devices: Incorporated into various electronic devices for power management and control.

Detailed and Complete Alternative Models

1. IPD5N03S4L-7: Similar specifications with a different package (TO-263-3)
2. IPD5N03S4L-8: Higher voltage rating (40V) with comparable characteristics

This comprehensive entry provides an in-depth understanding of the IPD5N03LAG, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

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