IPD80R1K0CEBTMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Electronic component - Use: Power switching applications - Characteristics: High power handling, low on-resistance, fast switching speed - Package: TO-252-3 (DPAK) - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications: - Voltage Rating: 80V - Current Rating: 80A - On-Resistance: 1.0mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: The IPD80R1K0CEBTMA1 features a standard TO-252-3 pin configuration with the following pins: 1. Gate 2. Drain 3. Source

Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for efficient power management - High current handling capability for robust performance

Advantages and Disadvantages: - Advantages: - High power handling capacity - Low on-resistance for reduced power loss - Fast switching speed for improved efficiency - Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The IPD80R1K0CEBTMA1 operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Industrial Automation: Power supply units, motor control systems - Renewable Energy: Solar inverters, wind turbine converters - Automotive: Electric vehicle powertrains, battery management systems

Detailed and Complete Alternative Models: 1. IPD60R1K0CE - 60V, 80A, 1.0mΩ, TO-252-3 package 2. IPD100R1K0CE - 100V, 80A, 1.0mΩ, TO-252-3 package 3. IPD80R2K0CE - 80V, 40A, 2.0mΩ, TO-252-3 package

This comprehensive entry provides an in-depth understanding of the IPD80R1K0CEBTMA1 Power MOSFET, covering its specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.