IPI26CN10N G - Product Overview

Introduction

The IPI26CN10N G is a semiconductor device belonging to the category of power MOSFETs. This component is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPI26CN10N G is utilized for switching and amplifying electronic signals in power supply circuits, motor control systems, and other high-power applications.
• Characteristics: This MOSFET exhibits low on-state resistance, high switching speed, and excellent thermal performance.
• Package: The IPI26CN10N G is typically available in a TO-220 package, providing efficient heat dissipation.
• Essence: Its essence lies in providing reliable and efficient power management solutions in various electronic systems.
• Packaging/Quantity: The IPI26CN10N G is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 100V
• Current Rating: 26A
• On-State Resistance: 0.04 ohms
• Gate Threshold Voltage: 2V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPI26CN10N G follows the standard pin configuration for a TO-220 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables efficient power transfer and minimizes power loss.
• High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency applications.
• Excellent Thermal Performance: Ensures reliable operation under high temperature conditions.

Advantages and Disadvantages

Advantages

• High current-carrying capability
• Low conduction losses
• Fast switching speed

Disadvantages

• Sensitivity to voltage spikes
• Gate drive requirements may be more stringent compared to other MOSFETs

Working Principles

The IPI26CN10N G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. When the gate voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The IPI26CN10N G finds extensive use in the following application fields: - Power supply units - Motor control systems - Inverter circuits - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

• IRF3205
• FDP8870
• STP80NF55-06

In conclusion, the IPI26CN10N G serves as a crucial component in power electronics, offering high-performance characteristics and versatile applications across various industries.

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