IR21531DPBF

Product Overview

Category: Integrated Circuit (IC)

Use: The IR21531DPBF is a high-voltage, half-bridge gate driver IC designed for use in power electronics applications. It provides the necessary drive signals for controlling the high-side and low-side MOSFETs in a half-bridge configuration.

Characteristics: - High voltage capability - Fast switching speed - Integrated bootstrap diode - Undervoltage lockout protection - Overcurrent protection - Thermal shutdown protection

Package: The IR21531DPBF is available in a 14-pin dual in-line package (DIP) or a surface mount package (SMD).

Essence: The essence of the IR21531DPBF lies in its ability to efficiently drive high-power MOSFETs in half-bridge configurations, enabling precise control of power electronics systems.

Packaging/Quantity: The IR21531DPBF is typically packaged in reels or tubes, with quantities varying depending on the supplier.

Specifications

Supply Voltage Range: 10V to 20V
Output Current: 200mA
Operating Temperature Range: -40°C to 125°C
Maximum Duty Cycle: 50%
Propagation Delay: 150ns
Rise/Fall Time: 50ns

Pin Configuration

The IR21531DPBF features a 14-pin configuration with the following pin assignments:

VCC: Power supply voltage input
VB: Bootstrap supply voltage input
HO: High-side gate driver output
LO: Low-side gate driver output
VS: High-side floating supply return
COM: Common connection for bootstrap and logic circuits
SD: Shutdown input
RT: Oscillator timing resistor
CT: Oscillator timing capacitor
OSC: Oscillator output
VREF: Reference voltage input
FB: Feedback input
CS: Current sense input
GND: Ground connection

Functional Features

High-side and low-side gate driver outputs for half-bridge configuration
Integrated bootstrap diode simplifies the bootstrap circuit design
Shutdown input for system control
Undervoltage lockout protection ensures safe operation
Overcurrent protection prevents damage to the IC and connected devices
Thermal shutdown protection safeguards against overheating

Advantages and Disadvantages

Advantages: - High voltage capability allows for use in a wide range of applications - Fast switching speed improves overall system efficiency - Integrated bootstrap diode reduces external component count - Comprehensive protection features enhance system reliability

Disadvantages: - Limited maximum duty cycle may restrict certain applications - Propagation delay and rise/fall time can affect system response time

Working Principles

The IR21531DPBF operates by generating complementary drive signals for the high-side and low-side MOSFETs in a half-bridge configuration. It utilizes an internal oscillator to control the timing of the drive signals, ensuring proper switching of the MOSFETs. The integrated bootstrap diode simplifies the bootstrap circuitry required for driving the high-side MOSFET.

Detailed Application Field Plans

The IR21531DPBF is commonly used in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems

Alternative Models

Other alternative models that can be considered as alternatives to the IR21531DPBF include: - IR2110 - IRS21844 - FAN7382 - HIP4081A

These alternative models offer similar functionality and can be used as replacements depending on specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IR21531DPBF v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IR21531DPBF in technical solutions:

Q: What is the IR21531DPBF? A: The IR21531DPBF is a high-voltage, self-oscillating half-bridge gate driver IC designed for driving power MOSFETs or IGBTs in applications such as motor drives, inverters, and switch-mode power supplies.
Q: What is the operating voltage range of the IR21531DPBF? A: The IR21531DPBF operates within a wide voltage range of 10V to 20V, making it suitable for various power electronics applications.
Q: Can the IR21531DPBF drive both high-side and low-side MOSFETs? A: Yes, the IR21531DPBF is specifically designed to drive both high-side and low-side MOSFETs in a half-bridge configuration.
Q: Does the IR21531DPBF have built-in protection features? A: Yes, the IR21531DPBF incorporates various protection features like under-voltage lockout (UVLO), over-current protection, and thermal shutdown to ensure safe operation and prevent damage to the device.
Q: What is the maximum switching frequency supported by the IR21531DPBF? A: The IR21531DPBF can support a maximum switching frequency of up to 500kHz, allowing for efficient and fast switching in power electronic circuits.
Q: Can the IR21531DPBF be used in single-ended configurations? A: No, the IR21531DPBF is specifically designed for half-bridge configurations and is not suitable for single-ended applications.
Q: What is the typical output current capability of the IR21531DPBF? A: The IR21531DPBF has a typical output current capability of 200mA, which is sufficient for driving most power MOSFETs or IGBTs.
Q: Does the IR21531DPBF require an external bootstrap diode? A: Yes, the IR21531DPBF requires an external bootstrap diode to generate the high-side gate drive voltage.
Q: Can the IR21531DPBF operate in a wide temperature range? A: Yes, the IR21531DPBF is designed to operate within a wide temperature range of -40°C to 125°C, making it suitable for various industrial and automotive applications.
Q: Are there any application notes or reference designs available for the IR21531DPBF? A: Yes, International Rectifier (now Infineon Technologies) provides application notes and reference designs that can help users understand and implement the IR21531DPBF in their technical solutions effectively.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.