IRF3415STRRPBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-263
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Tape & Reel, 800 units

Specifications

• Voltage Rating: 150V
• Continuous Drain Current (ID): 33A
• RDS(ON) (Max) @ VGS = 10V: 0.045Ω
• Gate Threshold Voltage (VGS(th)): 2 - 4V
• Input Capacitance (Ciss): 2500pF
• Power Dissipation (PD): 200W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation
• High voltage rating for versatile applications

Advantages and Disadvantages

Advantages: - High voltage rating allows for use in various applications - Low on-resistance minimizes power loss - Fast switching speed enhances efficiency

Disadvantages: - Higher input capacitance may require additional driver circuitry - Package size may not be suitable for space-constrained designs

Working Principles

The IRF3415STRRPBF operates based on the principles of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This enables the device to efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The IRF3415STRRPBF is well-suited for a wide range of applications including: - Power supplies - Motor control systems - High current switching circuits

Detailed and Complete Alternative Models

• IRF540N
• IRF3205
• IRF9540

Note: The above alternative models are provided as examples and may not directly substitute all features of the IRF3415STRRPBF.

This completes the English editing encyclopedia entry structure for the IRF3415STRRPBF.