Viz Specifikace pro podrobnosti o produktu.
IRF6614TR1PBF
Product Overview
Category
The IRF6614TR1PBF belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power
Package
The IRF6614TR1PBF is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic systems.
Packaging/Quantity
It is usually supplied in reels with a specific quantity per reel, depending on the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 75V
- Continuous Drain Current (ID): 39A
- RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
- Gate-Source Voltage (VGS) ±20V
- Total Power Dissipation (PD): 200W
Detailed Pin Configuration
The IRF6614TR1PBF typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low conduction losses
- Enhanced thermal performance
- Compatibility with various driving circuits
- High efficiency in power management applications
Advantages
- High current-handling capacity
- Reduced power dissipation
- Improved system efficiency
- Suitable for high-frequency switching applications
Disadvantages
- Sensitivity to static electricity
- Potential for thermal runaway if not properly managed
- Gate capacitance may affect high-frequency performance
Working Principles
The IRF6614TR1PBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate power flow in electronic circuits.
Detailed Application Field Plans
The IRF6614TR1PBF finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - DC-DC converters - Battery management systems - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IRF6614TR1PBF include: - IRF6614 - IRF6614PbF - IRF6614TRPbF - IRF6614TRPbF-7
In conclusion, the IRF6614TR1PBF power MOSFET offers high-performance characteristics suitable for various power management applications, despite its potential drawbacks. Its working principles and detailed application field plans demonstrate its versatility and importance in modern electronic systems.
[Word Count: 398]
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF6614TR1PBF v technických řešeních
What is the maximum drain-source voltage of IRF6614TR1PBF?
- The maximum drain-source voltage of IRF6614TR1PBF is 100V.
What is the continuous drain current rating of IRF6614TR1PBF?
- The continuous drain current rating of IRF6614TR1PBF is 14A.
What is the on-state resistance (RDS(on)) of IRF6614TR1PBF?
- The on-state resistance (RDS(on)) of IRF6614TR1PBF is typically 0.028 ohms.
What is the gate threshold voltage of IRF6614TR1PBF?
- The gate threshold voltage of IRF6614TR1PBF is typically 2V.
Is IRF6614TR1PBF suitable for use in automotive applications?
- Yes, IRF6614TR1PBF is suitable for use in automotive applications.
Can IRF6614TR1PBF be used in switching power supplies?
- Yes, IRF6614TR1PBF can be used in switching power supplies.
What is the operating temperature range of IRF6614TR1PBF?
- The operating temperature range of IRF6614TR1PBF is -55°C to 150°C.
Does IRF6614TR1PBF have built-in ESD protection?
- No, IRF6614TR1PBF does not have built-in ESD protection.
What package type is IRF6614TR1PBF available in?
- IRF6614TR1PBF is available in a D2PAK package.
Is IRF6614TR1PBF RoHS compliant?
- Yes, IRF6614TR1PBF is RoHS compliant.