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IRF7306QTRPBF
Product Category: Integrated Circuit
Basic Information Overview: - Category: Power MOSFET - Use: Switching applications in power supplies and motor control circuits - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: 8-SOIC (Small Outline Integrated Circuit) - Essence: Dual N-Channel MOSFET - Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications: - Drain to Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 4.3A - Rds(on) (Max) @ Vgs: 25mΩ @ 10V - Gate to Source Voltage (Vgs): ±20V - Input Capacitance (Ciss): 1100pF - Power Dissipation (Pd): 2.5W
Detailed Pin Configuration: 1. GATE1 - First MOSFET Gate 2. SOURCE1 - First MOSFET Source 3. DRAIN1 - First MOSFET Drain 4. SOURCE2 - Second MOSFET Source 5. GATE2 - Second MOSFET Gate 6. DRAIN2 - Second MOSFET Drain 7. NC - No Connection 8. GND - Ground
Functional Features: - Dual N-Channel MOSFET in a single package - Low thermal resistance for improved thermal performance - Fast switching speed for efficient power management
Advantages: - High efficiency due to low on-resistance - Compact package suitable for space-constrained designs - Suitable for high-frequency switching applications
Disadvantages: - Limited maximum drain to source voltage compared to some alternatives - Sensitive to static discharge, requiring proper handling and ESD protection
Working Principles: The IRF7306QTRPBF operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminals to control the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Power supplies - Motor control circuits - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models: 1. IRF7306PBF: Similar specifications and characteristics 2. IRF7313QTRPBF: Higher voltage rating with comparable performance 3. IRF7309PBF: Lower on-resistance for higher efficiency
This comprehensive entry provides an in-depth understanding of the IRF7306QTRPBF, its specifications, features, applications, and alternatives, catering to the needs of professionals and enthusiasts in the field of electronic components.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF7306QTRPBF v technických řešeních
What is the IRF7306QTRPBF?
- The IRF7306QTRPBF is a dual N-channel MOSFET in a compact SO-8 package, commonly used for switching and amplification applications.
What is the maximum drain-source voltage of the IRF7306QTRPBF?
- The maximum drain-source voltage of the IRF7306QTRPBF is 30 volts.
What is the maximum continuous drain current of the IRF7306QTRPBF?
- The maximum continuous drain current of the IRF7306QTRPBF is 4.3 amperes.
What are the typical applications of the IRF7306QTRPBF?
- The IRF7306QTRPBF is commonly used in power management, motor control, and DC-DC converter circuits.
What is the on-state resistance (RDS(on)) of the IRF7306QTRPBF?
- The on-state resistance of the IRF7306QTRPBF is typically around 0.04 ohms.
Is the IRF7306QTRPBF suitable for high-frequency switching applications?
- Yes, the IRF7306QTRPBF is suitable for high-frequency switching due to its low gate charge and fast switching characteristics.
Can the IRF7306QTRPBF be used in automotive applications?
- Yes, the IRF7306QTRPBF is often used in automotive systems such as electronic power steering and transmission control modules.
What is the operating temperature range of the IRF7306QTRPBF?
- The IRF7306QTRPBF can operate within a temperature range of -55°C to 150°C.
Does the IRF7306QTRPBF require a heat sink for certain applications?
- Depending on the application and power dissipation, a heat sink may be required to ensure optimal thermal performance.
Are there any recommended alternatives to the IRF7306QTRPBF for similar applications?
- Some alternatives to the IRF7306QTRPBF include the IRF7316, IRF7341, and IRF7343, which offer similar performance characteristics for various applications.