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IRFH5210TR2PBF

IRFH5210TR2PBF

Introduction

The IRFH5210TR2PBF is a power MOSFET belonging to the category of electronic components. This semiconductor device is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

  • Voltage Rating: 100V
  • Current Rating: 14A
  • On-Resistance: 8.5mΩ
  • Gate Charge: 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IRFH5210TR2PBF features a standard pin configuration with three pins: gate, drain, and source. The pinout is as follows: - Pin 1 (Gate): Input for controlling the MOSFET - Pin 2 (Drain): Output terminal for the load - Pin 3 (Source): Common terminal

Functional Features

  • High Voltage Capability: Suitable for applications requiring high voltage handling
  • Low On-Resistance: Minimizes power loss and heat generation
  • Fast Switching Speed: Enables efficient switching operations in electronic circuits

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Low power dissipation
  • Fast response time

Disadvantages

  • Sensitivity to static electricity
  • Limited current handling capacity

Working Principles

The IRFH5210TR2PBF operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for effective switching and amplification in electronic circuits.

Detailed Application Field Plans

The IRFH5210TR2PBF finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • IRFH5207TR2PBF: Similar specifications with lower current rating
  • IRFH5220TR2PBF: Higher current rating with comparable characteristics
  • IRFH5230TR2PBF: Enhanced voltage rating and on-resistance

In conclusion, the IRFH5210TR2PBF power MOSFET offers efficient power management and versatile application possibilities, making it a valuable component in electronic circuit design.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRFH5210TR2PBF v technických řešeních

  1. What is the maximum drain-source voltage of IRFH5210TR2PBF?

    • The maximum drain-source voltage of IRFH5210TR2PBF is 100V.
  2. What is the continuous drain current rating of IRFH5210TR2PBF?

    • The continuous drain current rating of IRFH5210TR2PBF is 42A.
  3. What is the on-state resistance (RDS(on)) of IRFH5210TR2PBF?

    • The on-state resistance (RDS(on)) of IRFH5210TR2PBF is typically 4.5mΩ at VGS = 10V.
  4. What is the gate threshold voltage of IRFH5210TR2PBF?

    • The gate threshold voltage of IRFH5210TR2PBF is typically 2V.
  5. Is IRFH5210TR2PBF suitable for high-frequency switching applications?

    • Yes, IRFH5210TR2PBF is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
  6. What are the typical applications for IRFH5210TR2PBF?

    • Typical applications for IRFH5210TR2PBF include synchronous rectification, motor control, and power supplies.
  7. Does IRFH5210TR2PBF have built-in protection features?

    • IRFH5210TR2PBF has built-in overcurrent protection and thermal shutdown features for enhanced reliability.
  8. What is the operating temperature range of IRFH5210TR2PBF?

    • IRFH5210TR2PBF has an operating temperature range of -55°C to 175°C.
  9. Can IRFH5210TR2PBF be used in automotive applications?

    • Yes, IRFH5210TR2PBF is suitable for automotive applications due to its high current handling capability and robust design.
  10. Are there any recommended external components to use with IRFH5210TR2PBF?

    • It is recommended to use appropriate gate drivers and snubber circuits to optimize the performance of IRFH5210TR2PBF in specific applications.