IS42S16160G-7BL-TR

Product Overview

Category

IS42S16160G-7BL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16160G-7BL-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160G-7BL-TR lies in its ability to provide fast and efficient data storage and retrieval for various computing applications.

Packaging/Quantity

IS42S16160G-7BL-TR is typically packaged in trays or reels and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 7
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Clock Frequency: Up to 143 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160G-7BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /BA0
42. /BA1
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• On-chip address and control circuitry
• Auto-refresh and self-refresh modes for power saving
• Easy integration into various computing systems

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with certain older computing systems

Working Principles

IS42S16160G-7BL-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The memory cells are accessed by sending row and column addresses along with control signals. The data is stored and retrieved by charging and discharging the capacitors.

Detailed Application Field Plans

IS42S16160G-7BL-TR finds extensive application in the following fields:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Networking equipment
5. Embedded systems
6. Industrial automation
7. Medical devices
8. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16160G-7BL-TR include:

1. MT48LC16M16A2P-75: Micron Technology Inc.
2. K4S561632H-UC75: Samsung Electronics Co., Ltd.
3. HYB39S256160FE-7: Infineon Technologies AG
4. M12L16161A-7T: Alliance Memory Inc.
5. AS4C16M16SA-7TCN: Alliance Semiconductor Corporation

These alternative models offer similar specifications and functionality, providing customers with a range of options for their memory requirements.

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