IS42S83200G-6TLI-TR

Product Overview

Category

IS42S83200G-6TLI-TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S83200G-6TLI-TR is typically packaged in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S83200G-6TLI-TR is usually packaged in reels or trays, with a typical quantity of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 2M x 16 bits
• Speed: 6 nanoseconds (max)
• Voltage Supply: 3.3V ± 0.3V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Multiple chip select options for flexible memory configuration

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption helps to extend battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Relatively higher cost compared to other types of memory technologies.
• Limited endurance, as repeated read/write cycles can degrade performance over time.
• Susceptible to data loss if not properly backed up or protected against power failures.

Working Principles

IS42S83200G-6TLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in capacitors within an array of memory cells, with each cell representing a single bit of information. The stored data is accessed by sending address signals and control signals to the memory chip, which then retrieves the requested data and transfers it to the device's processor.

Detailed Application Field Plans

IS42S83200G-6TLI-TR finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile phones and tablets 5. Gaming consoles 6. Networking equipment 7. Automotive electronics 8. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S83200G-6TLI-TR include: 1. MT48LC32M16A2P-75: Micron Technology Inc. 2. K4S561632H-UC75: Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: Infineon Technologies AG 4. AS4C32M16SB-7TCN: Alliance Memory Inc. 5. M12L64164A-7T: Macronix International Co., Ltd.

These alternative models offer similar specifications and functionality, providing options for different design requirements and supply chain considerations.

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