IS42VM16160E-6BLI

Product Overview

Category

IS42VM16160E-6BLI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42VM16160E-6BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS42VM16160E-6BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS42VM16160E-6BLI has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /LDQM
42. UDQM
43. /RESET
44. VDD
45. VDD
46. VSS
47. VSS
48. NC

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps to prolong battery life in portable devices
• Compact package size facilitates integration into various electronic devices

Disadvantages

• Limited compatibility with older systems that do not support SDRAM technology
• Relatively higher cost compared to other memory technologies like NAND flash

Working Principles

IS42VM16160E-6BLI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in an array of capacitors, which are organized into rows and columns. The data is accessed by sending commands and addresses through the control pins, and the stored information is read or written using the data pins.

Detailed Application Field Plans

IS42VM16160E-6BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42VM16160E-6BLI include: - MT48LC16M16A2P-75: 16 Megabit SDRAM with similar specifications - K4S561632H-UC75: 16 Megabit SDRAM with comparable features - AS4C16M16SA-7TCN: 16 Megabit SDRAM offering similar performance

These alternative models can be considered based on specific requirements and compatibility with the target system.

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