IS43DR86400E-25DBL

Product Overview

Category

IS43DR86400E-25DBL belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

IS43DR86400E-25DBL is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of IS43DR86400E-25DBL lies in its ability to provide fast and efficient data storage and retrieval, contributing to the overall performance of electronic devices.

Packaging/Quantity

IS43DR86400E-25DBL is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 4 Gigabits (Gb)
• Organization: 512 Megabytes (MB) x 8 bits
• Operating Voltage: 2.5 Volts (V)
• Speed Grade: DDR3-1600
• Interface: Double Data Rate (DDR)
• Package Type: Ball Grid Array (BGA)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS43DR86400E-25DBL is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VDD
38. /RAS
39. /CAS
40. /WE
41. /CS
42. BA0
43. BA1
44. VSS
45. CK
46. CK#
47. VDD
48. DQS0
49. DQS0#
50. DM0
51. DM1
52. VSS
53. DQS1
54. DQS1#
55. VDD
56. DQSN0
57. DQSN0#
58. VSS
59. DQSN1
60. DQSN1#

Functional Features

• High-speed data transfer rate
• Low power consumption
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for efficient power management
• Burst mode operation for optimized data access

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval capabilities
• Low power consumption, contributing to longer battery life in portable devices
• Compact size, enabling integration into various electronic devices
• Wide temperature range operation, suitable for different environmental conditions
• Reliable performance, ensuring data integrity

Disadvantages

• Limited storage capacity compared to other memory technologies
• Volatile memory, requiring constant power supply to retain data
• Relatively higher cost compared to some alternative memory options

Working Principles

IS43DR86400E-25DBL operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed, the appropriate memory cells are activated, and the stored data is read or written.

Detailed Application Field Plans

IS43DR86400E-25DBL finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS43DR86400E-25DBL include: - IS43TR86400E-25DBL - IS43DR86400F-25DBL - IS43DR86400G-25