IS46DR16128C-3DBLA1-TR

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed performance - Low power consumption - Compact size - Reliable data storage

Package: 128-ball BGA package

Essence: The IS46DR16128C-3DBLA1-TR is a high-performance memory module designed for use in various electronic devices. It offers fast data access, low power consumption, and reliable data storage capabilities.

Packaging/Quantity: The IS46DR16128C-3DBLA1-TR is typically packaged in a 128-ball BGA package. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Supply Voltage: 1.7V - 1.95V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: 166 MHz
• Interface: Parallel
• Refresh Mode: Auto-refresh and self-refresh
• Package Dimensions: 8mm x 9mm

Detailed Pin Configuration

The IS46DR16128C-3DBLA1-TR has a total of 128 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration:

Functional Features

• High-speed data access: The IS46DR16128C-3DBLA1-TR offers fast data read and write operations, making it suitable for applications that require quick data processing.
• Low power consumption: This memory module is designed to minimize power consumption, making it ideal for battery-powered devices.
• Reliable data storage: The IS46DR16128C-3DBLA1-TR ensures reliable data storage with built-in error correction capabilities.
• Compact size: With its small form factor, this memory module can be easily integrated into space-constrained electronic devices.

Advantages and Disadvantages

Advantages: - High-speed performance - Low power consumption - Reliable data storage - Compact size

Disadvantages: - Limited capacity (16 Megabits)

Working Principles

The IS46DR16128C-3DBLA1-TR operates based on the principles of dynamic random access memory (DRAM). It stores data in a capacitor-based cell structure, where each bit of data is stored as an electrical charge. To read or write data, the memory controller sends appropriate signals to the memory module, allowing the transfer of data between the module and the device's processor.

Detailed Application Field Plans

The IS46DR16128C-3DBLA1-TR can be used in various electronic devices that require high-speed and reliable data storage capabilities. Some potential application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players.
2. Networking Equipment: Routers, switches, and network attached storage (NAS) devices.
3. Automotive Electronics: Infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
4. Industrial Control Systems: Programmable logic controllers (PLCs), human-machine interfaces (HMIs), and robotics.
5. Consumer Electronics: Digital cameras, gaming consoles, and wearable devices.

Detailed and Complete Alternative Models

1. IS46DR08160D-3DBL - 8 Megabit (1 Megabyte) DRAM module with similar specifications.
2. IS46DR32160D-3DBLI - 32 Megabit (4 Megabyte) DRAM module with higher capacity.
3. IS46DR64160D-3DBLI - 64 Megabit (8 Megabyte) DRAM module with higher capacity.

These alternative models offer different capacities to suit specific application requirements while maintaining similar performance characteristics.

Note: The above information is provided for reference purposes only. Please refer to the manufacturer's datasheet for the most accurate and up-to-date specifications.