IS61LV256-12TLI-TR

Product Overview

Category

IS61LV256-12TLI-TR belongs to the category of integrated circuits (ICs) specifically designed for memory applications.

Use

This product is commonly used in electronic devices that require non-volatile storage, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in IS61LV256-12TLI-TR remains even when power is turned off.
• High capacity: This IC has a storage capacity of 256 kilobits (32 kilobytes).
• Fast access time: With a speed rating of 12 nanoseconds, it allows for quick retrieval of data.
• Low power consumption: IS61LV256-12TLI-TR is designed to operate efficiently with minimal power requirements.

Package

IS61LV256-12TLI-TR is available in a small outline integrated circuit (SOIC) package. This package type ensures easy integration into various electronic devices.

Essence

The essence of IS61LV256-12TLI-TR lies in its ability to provide reliable and high-performance non-volatile memory storage for electronic devices.

Packaging/Quantity

IS61LV256-12TLI-TR is typically packaged in reels or tubes, containing a quantity of 2500 units per reel/tube.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Package Type: SOIC

Detailed Pin Configuration

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Chip Enable (CE): Activates the memory chip for read/write operations.
• Output Enable (OE): Enables the output buffers to drive data onto the data bus.
• Write Enable (WE): Controls write operations to the memory.
• Address Inputs (A0-A14): Selects the memory location to be accessed.
• Data Inputs/Outputs (DQ0-DQ7): Bi-directional pins for data transfer.
• Power Supply (VCC): Provides the necessary power for the IC.
• Ground (GND): Common ground reference.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing a significant amount of data.
• Fast access time enables quick retrieval of information.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternative memory options.

Working Principles

IS61LV256-12TLI-TR operates based on static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that it requires continuous power supply to retain the stored information. The memory cells within the IC are organized into a matrix, with each cell representing a bit of data. By applying appropriate control signals, data can be written to or read from specific memory locations.

Detailed Application Field Plans

IS61LV256-12TLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Printers and scanners - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI: 256 kilobit (32 kilobyte) SRAM with a faster access time of 10 nanoseconds.
2. IS61LV5128AL-10TLI: 512 kilobit (64 kilobyte) SRAM with the same access time as IS61LV256-12TLI-TR.
3. IS61LV1024AL-10TLI: 1 megabit (128 kilobyte) SRAM with a slower access time of 10 nanoseconds.

These alternative models offer different storage capacities and access times, allowing users to choose the most suitable option for their specific requirements.

Word count: 550 words