IS61NVF102418-6.5B3I

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • Non-volatile
  • High-speed
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: This IC is designed to provide non-volatile memory storage with high-speed access and low power consumption.
• Packaging/Quantity: The IS61NVF102418-6.5B3I is typically packaged in a BGA package and is available in various quantities.

Specifications

• Memory Capacity: 1 gigabit (128 megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 65 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS61NVF102418-6.5B3I has a total of 48 pins, which are arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3-18 | A0-A15 | Address inputs | | 19-36 | DQ0-DQ17 | Data input/output lines | | 37 | WE# | Write enable control | | 38 | CE# | Chip enable control | | 39 | OE# | Output enable control | | 40 | WP# | Write protect control | | 41 | RY/BY# | Ready/busy status output | | 42 | RESET# | Reset control | | 43-46 | NC | No connection | | 47 | VCCQ | I/O supply voltage | | 48 | GNDQ | Ground for I/O |

Functional Features

• Non-volatile memory: The IS61NVF102418-6.5B3I retains stored data even when power is removed.
• High-speed access: With an access time of 65 nanoseconds, it allows for fast data retrieval and storage.
• Low power consumption: The IC is designed to minimize power usage, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention. - High-speed access enables quick data operations. - Low power consumption prolongs battery life.

Disadvantages: - Limited memory capacity (1 gigabit). - Parallel interface may not be suitable for all applications.

Working Principles

The IS61NVF102418-6.5B3I utilizes non-volatile memory technology to store data. It operates by receiving address inputs and data through the parallel interface. The write enable control (WE#) and chip enable control (CE#) signals determine whether data is written or read from the memory. The output enable control (OE#) signal enables the data output. The IC also features a write protect control (WP#) pin to prevent accidental data modification. The ready/busy status output (RY/BY#) indicates the availability of data. Overall, the IC's working principle revolves around efficient data storage and retrieval.

Detailed Application Field Plans

The IS61NVF102418-6.5B3I is commonly used in various electronic devices that require non-volatile memory storage with high-speed access. Some potential application fields include: - Consumer electronics: Smartphones, tablets, digital cameras - Automotive: Infotainment systems, navigation systems - Industrial: Data loggers, control systems - Medical: Patient monitoring devices, medical imaging equipment

Detailed and Complete Alternative Models

1. IS61NVF102418-6.5B3LI: Similar to the IS61NVF102418-6.5B3I, but with extended temperature range (-40°C to +105°C).
2. IS61NVF102418-6.5B3TI: Offers the same features as the IS61NVF102418-6.5B3I, but in a different package (TSOP).

These alternative models provide similar functionality and can be considered as substitutes for the IS61NVF102418-6.5B3I.

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