IS66WVE1M16BLL-55BLI-TR

Product Overview

Category

IS66WVE1M16BLL-55BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed operation: The IS66WVE1M16BLL-55BLI-TR offers fast read and write speeds, allowing for efficient data processing.
• Large storage capacity: With a capacity of 1M x 16 bits, this memory device provides ample space for storing data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The IS66WVE1M16BLL-55BLI-TR comes in a small form factor package, enabling easy integration into various electronic systems.
• Reliable performance: This memory device offers reliable and stable performance, ensuring data integrity and system reliability.

Package and Quantity

The IS66WVE1M16BLL-55BLI-TR is typically packaged in a surface-mount technology (SMT) package. The exact package dimensions and specifications can be found in the product datasheet. It is commonly available in reels or trays, with quantities varying depending on customer requirements.

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The IS66WVE1M16BLL-55BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. GND
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. WE#
36. OE#
37. UB#
38. LB#
39. CE#
40. CLK
41. CKE
42. CS#
43. RAS#
44. CAS#
45. NC
46. VREF
47. VSS
48. VDDQ

Functional Features

• Random Access: The IS66WVE1M16BLL-55BLI-TR allows for random access to any memory location, enabling efficient data retrieval.
• Synchronous Operation: This memory device operates synchronously with an external clock signal, ensuring reliable and coordinated data transfer.
• Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for individual address inputs.
• Low Latency: The IS66WVE1M16BLL-55BLI-TR offers low latency access, minimizing delays in data processing.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into electronic systems.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility: The IS66WVE1M16BLL-55BLI-TR may not be compatible with all electronic devices due to specific interface requirements.
• Higher cost compared to other memory technologies: SRAM memory devices tend to be more expensive than alternative memory technologies such as DRAM.

Working Principles

The IS66WVE1M16BLL-55BLI-TR is based on synchronous static random access memory (SRAM) technology. It stores data using flip-flop circuits, which retain information as long as power is supplied. The device operates synchronously with an external clock signal, allowing for coordinated data transfer between the memory and the host system.

When a read operation is initiated, the memory controller sends the appropriate address to the IS66WVE1M16BLL-55BLI