IS66WVE1M16EBLL-55BLI-TR

Product Overview

Category

IS66WVE1M16EBLL-55BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WVE1M16EBLL-55BLI-TR is available in a small form factor package, designed to fit into various electronic devices seamlessly.

Essence

The essence of IS66WVE1M16EBLL-55BLI-TR lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: IS66WVE1M16EBLL-55BLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 1 Megabit x 16
• Operating Voltage: 3.3V
• Speed Grade: -55°C to +85°C
• Interface: Parallel
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The pin configuration of IS66WVE1M16EBLL-55BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. /CAS
36. /RAS
37. /WE
38. /OE
39. /CS
40. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• Low power standby mode
• On-die termination (ODT) support
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast data access speed ensures quick retrieval of information
• Low power consumption helps in extending battery life
• Compact package size enables easy integration into space-constrained devices
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to higher-capacity memory options
• Higher cost per unit compared to some other memory technologies
• Requires proper handling and static discharge precautions during installation

Working Principles

IS66WVE1M16EBLL-55BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information can be accessed and manipulated by sending appropriate signals through the pins of the device.

Detailed Application Field Plans

IS66WVE1M16EBLL-55BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics (e.g., televisions, gaming consoles) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS66WVE1M16EBLL-55BLI-TR include: - IS66WVE1M16EBLL-55BLI - IS66WVE1M16EBLL-55TLI - IS66WVE1M16EBLL-55XLI - IS66WVE1M16EBLL-55CLI

These alternative models offer similar functionality and characteristics, with slight variations in specifications or package options.

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