The IXFH120N15P follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage rating - Low on-state resistance - Suitable for high-power applications - Fast switching speed
Disadvantages: - Higher gate threshold voltage compared to some alternative models - Relatively higher cost
The IXFH120N15P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.
This MOSFET is suitable for various high-power applications including: - Motor drives - Power supplies - Renewable energy systems - Electric vehicles
IXFH110N15T
IXFH130N15P
IXFH125N15T
In conclusion, the IXFH120N15P is a high-voltage, high-current power MOSFET designed for efficient power management in various high-power applications. Its characteristics, specifications, and functional features make it a suitable choice for demanding power electronics designs.
What is IXFH120N15P?
What is the maximum voltage and current rating of IXFH120N15P?
What are the typical applications of IXFH120N15P?
What are the key features of IXFH120N15P that make it suitable for technical solutions?
What is the thermal performance of IXFH120N15P?
Are there any recommended heatsinking or thermal management guidelines for IXFH120N15P?
Does IXFH120N15P have built-in protection features?
What are the typical operating conditions for IXFH120N15P?
Can IXFH120N15P be used in parallel configurations for higher power applications?
Where can I find detailed technical specifications and application notes for IXFH120N15P?