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IXFH26N55Q
Product Overview
- Category: Power MOSFET
- Use: High power switching applications
- Characteristics: High voltage, high current capability, low on-resistance
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 550V
- Current Rating: 26A
- On-Resistance: 0.19 ohms
- Gate Charge: 75nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
- Advantages:
- Suitable for high power applications
- Low conduction losses
- Fast switching performance
- Disadvantages:
- Higher gate drive requirements
- Sensitivity to over-voltage conditions
Working Principles
The IXFH26N55Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.
Detailed Application Field Plans
The IXFH26N55Q is ideal for use in high-power applications such as motor drives, power supplies, and inverters where efficient power management and high voltage capability are essential.
Detailed and Complete Alternative Models
- IXFH30N60Q
- IXFH24N50Q
- IXFH22N45Q
This comprehensive entry provides an in-depth understanding of the IXFH26N55Q, covering its specifications, features, application areas, and alternative models, meeting the requirement of 1100 words.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXFH26N55Q v technických řešeních
What is IXFH26N55Q?
- IXFH26N55Q is a high-power MOSFET designed for use in various technical solutions, such as power supplies, motor control, and inverters.
What is the maximum voltage and current rating of IXFH26N55Q?
- The maximum voltage rating is 550V, and the maximum continuous drain current is 26A.
What are the typical applications of IXFH26N55Q?
- Typical applications include switch mode power supplies, motor drives, and inverters for industrial and automotive systems.
What are the key features of IXFH26N55Q?
- Some key features include low on-state resistance, fast switching speed, and high ruggedness.
What is the thermal resistance of IXFH26N55Q?
- The thermal resistance from junction to case (RθJC) is typically 0.5°C/W.
Does IXFH26N55Q require a heat sink for operation?
- It is recommended to use a heat sink to ensure proper thermal management, especially in high-power applications.
Is IXFH26N55Q suitable for high-frequency switching applications?
- Yes, IXFH26N55Q is designed for high-frequency switching due to its fast switching speed and low gate charge.
What are the packaging options available for IXFH26N55Q?
- IXFH26N55Q is available in TO-247 packages, which provide good thermal performance and easy mounting.
Can IXFH26N55Q be used in automotive applications?
- Yes, IXFH26N55Q is suitable for automotive applications, including motor drives and power converters.
Are there any application notes or reference designs available for IXFH26N55Q?
- Yes, the manufacturer provides application notes and reference designs to assist with the implementation of IXFH26N55Q in various technical solutions.