IXFN48N50Q

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-247
Essence: Power transistor for high-power applications
Packaging/Quantity: Single unit

Specifications

• Voltage Rating: 500V
• Current Rating: 48A
• RDS(on): 0.08 ohms
• Gate Threshold Voltage: 4V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance
• Fast switching speed
• High input impedance
• Low gate drive power required

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Suitable for high-power applications

Disadvantages: - Relatively high gate threshold voltage - Limited operating temperature range

Working Principles

The IXFN48N50Q is a power MOSFET that operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field which controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFN48N50Q is suitable for use in various high-power applications such as: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - Inductive heating systems

Detailed and Complete Alternative Models

1. IRFP4668PbF
2. STW45NM50FD
3. FDPF51N25

This completes the English editing encyclopedia entry structure format for IXFN48N50Q. The content provided covers the basic information overview, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.