IXFX66N50Q2

Product Overview

Category: Power MOSFET
Use: High-power switching applications
Characteristics: High voltage, high current capability, low on-state resistance
Package: TO-220
Essence: Power management
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

Voltage Rating: 500V
Current Rating: 66A
On-State Resistance: 0.044 ohms
Gate Threshold Voltage: 2.5V
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

Pin 1: Gate
Pin 2: Drain
Pin 3: Source

Functional Features

High voltage capability
Low gate charge
Fast switching speed
Low on-state resistance
Avalanche energy specified
RoHS compliant

Advantages and Disadvantages

Advantages

High power handling capability
Low conduction losses
Fast switching speed
RoHS compliant

Disadvantages

Sensitive to static electricity
Requires careful handling during installation

Working Principles

The IXFX66N50Q2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of a channel in a semiconductor material.

Detailed Application Field Plans

The IXFX66N50Q2 is suitable for a wide range of high-power switching applications, including: - Switch-mode power supplies - Motor drives - Inverters - Induction heating - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

IXFX65N50Q2
IXFX67N50Q2
IXFX68N50Q2
IXFX69N50Q2

This completes the English editing encyclopedia entry structure format for IXFX66N50Q2, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXFX66N50Q2 v technických řešeních

What is IXFX66N50Q2?
- IXFX66N50Q2 is a high-performance, low-loss, 500V, 66A MOSFET designed for various power applications.
What are the key features of IXFX66N50Q2?
- The key features include low on-state resistance, fast switching speed, high avalanche energy, and a rugged silicon design.
In what technical solutions can IXFX66N50Q2 be used?
- IXFX66N50Q2 can be used in applications such as motor control, power supplies, inverters, and welding equipment.
What is the maximum voltage and current rating of IXFX66N50Q2?
- IXFX66N50Q2 has a maximum voltage rating of 500V and a maximum current rating of 66A.
What are the thermal characteristics of IXFX66N50Q2?
- The MOSFET has low thermal resistance and is designed to efficiently dissipate heat in high-power applications.
Does IXFX66N50Q2 require any special gate driving considerations?
- Yes, IXFX66N50Q2 requires proper gate driving to ensure optimal performance and reliability in the application.
Can IXFX66N50Q2 be used in parallel configurations for higher current applications?
- Yes, IXFX66N50Q2 can be used in parallel to increase the current-handling capability in high-power designs.
What are the recommended mounting and heatsinking considerations for IXFX66N50Q2?
- Proper mounting techniques and adequate heatsinking are essential to maintain the MOSFET's temperature within safe operating limits.
Are there any application notes or reference designs available for IXFX66N50Q2?
- Yes, application notes and reference designs are available to assist in the proper implementation of IXFX66N50Q2 in various technical solutions.
Where can I find detailed specifications and application information for IXFX66N50Q2?
- Detailed specifications and application information for IXFX66N50Q2 can be found in the product datasheet and application notes provided by the manufacturer.