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IXGN82N120B3H1
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IXGN82N120B3H1

Product Overview

Category

The IXGN82N120B3H1 belongs to the category of high-voltage insulated gate bipolar transistors (IGBTs).

Use

It is used in various power electronic applications such as motor drives, renewable energy systems, and industrial automation.

Characteristics

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • High reliability

Package

The IXGN82N120B3H1 is typically available in a TO-268 package.

Essence

This IGBT is essential for controlling high-power electrical loads in a wide range of applications.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the manufacturer's specifications.

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 80A
  • Maximum Operating Temperature: 150°C
  • Gate-Emitter Voltage: ±20V
  • Collector-Emitter Saturation Voltage: 2.0V

Detailed Pin Configuration

The IXGN82N120B3H1 has a standard three-terminal configuration: 1. Collector (C) 2. Gate (G) 3. Emitter (E)

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast switching times
  • Robust thermal performance

Advantages

  • Suitable for high-power applications
  • Enhanced efficiency due to low conduction losses
  • Reliable operation in demanding environments

Disadvantages

  • Higher cost compared to traditional power transistors
  • Requires careful consideration of heat dissipation in high-power applications

Working Principles

The IXGN82N120B3H1 operates based on the principles of controlling current flow between the collector and emitter terminals using the gate signal. By modulating the gate voltage, the device can efficiently switch high currents with minimal losses.

Detailed Application Field Plans

  1. Motor Drives: The IGBT is utilized in variable frequency drives for precise control of electric motors in industrial and automotive applications.
  2. Renewable Energy Systems: It plays a crucial role in grid-tied inverters for solar and wind power generation, enabling efficient power conversion.
  3. Industrial Automation: Used in power electronics for controlling heavy machinery and equipment, contributing to energy savings and process optimization.

Detailed and Complete Alternative Models

  1. Infineon Technologies - IKW40N120H3
  2. STMicroelectronics - STGW30NC60WD
  3. ON Semiconductor - NGTB40N120FLWG

In conclusion, the IXGN82N120B3H1 is a high-voltage IGBT with versatile applications in power electronics, offering efficient and reliable performance in various high-power systems.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXGN82N120B3H1 v technických řešeních

  1. What is the maximum voltage rating of IXGN82N120B3H1?

    • The maximum voltage rating of IXGN82N120B3H1 is 1200V.

  2. What is the maximum current rating of IXGN82N120B3H1?

    • The maximum current rating of IXGN82N120B3H1 is [insert value if available].

  3. What type of package does IXGN82N120B3H1 come in?

    • IXGN82N120B3H1 comes in a [insert package type if available] package.

  4. What are the typical applications for IXGN82N120B3H1?

    • IXGN82N120B3H1 is commonly used in applications such as motor drives, inverters, and power supplies.

  5. Does IXGN82N120B3H1 have built-in protection features?

    • Yes, IXGN82N120B3H1 may include built-in protection features such as overcurrent protection and thermal shutdown.

  6. What is the switching frequency range for IXGN82N120B3H1?

    • The switching frequency range for IXGN82N120B3H1 is typically between [insert range if available].

  7. Is IXGN82N120B3H1 suitable for high-temperature environments?

    • Yes, IXGN82N120B3H1 is designed to operate in high-temperature environments with proper thermal management.

  8. What are the key performance characteristics of IXGN82N120B3H1?

    • The key performance characteristics of IXGN82N120B3H1 include low conduction and switching losses, high efficiency, and fast switching speeds.

  9. Can IXGN82N120B3H1 be used in parallel configurations for higher power applications?

    • Yes, IXGN82N120B3H1 can be used in parallel configurations to achieve higher power levels.

  10. Are there any application notes or reference designs available for using IXGN82N120B3H1 in technical solutions?

    • Yes, application notes and reference designs are available to assist in the implementation of IXGN82N120B3H1 in various technical solutions.