IXSR40N60CD1

Product Overview

• Category: Power semiconductor device
• Use: High power switching applications
• Characteristics: High voltage, high current capability, fast switching speed
• Package: TO-247
• Essence: Silicon carbide (SiC) MOSFET
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 600V
• Current Rating: 40A
• On-state Resistance: 60mΩ
• Gate Threshold Voltage: 4V
• Gate Charge: 40nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain

Functional Features

• Fast switching speed
• Low on-state resistance
• High temperature operation capability
• Enhanced thermal performance

Advantages and Disadvantages

• Advantages:
  • Reduced power losses
  • Improved system efficiency
  • Higher operating temperatures
• Disadvantages:
  • Higher cost compared to traditional silicon-based devices
  • Sensitivity to overvoltage conditions

Working Principles

The IXSR40N60CD1 operates based on the principles of field-effect transistors, utilizing the characteristics of silicon carbide to enable high-speed switching and low conduction losses. When a suitable gate voltage is applied, the device allows current to flow between the source and drain terminals, effectively controlling the power flow in the circuit.

Detailed Application Field Plans

The IXSR40N60CD1 is well-suited for various high-power applications, including: - Switch-mode power supplies - Motor drives - Renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

• Alternative Model 1: IXYS IXFN40N60Q2
• Alternative Model 2: Cree C3M0060065K
• Alternative Model 3: Infineon IDH06G65C5

This comprehensive entry provides an in-depth understanding of the IXSR40N60CD1, covering its specifications, functional features, application fields, and alternative models, making it a valuable resource for professionals and enthusiasts in the field of power electronics.