Viz Specifikace pro podrobnosti o produktu.
IXTP1R4N100P
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, low on-resistance, high current capability - Package: TO-220AB - Essence: High-power switching and amplification - Packaging/Quantity: Typically packaged in tubes or trays, quantity varies by manufacturer
Specifications: - Voltage Rating: 100V - Current Rating: 30A - On-Resistance: 1.4 mΩ - Gate Charge: 50nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability - Low on-resistance - Fast switching speed - Low gate charge - Enhanced ruggedness and reliability
Advantages: - Suitable for high-power applications - Low conduction losses - Reduced heat dissipation - Enhanced system efficiency
Disadvantages: - Higher cost compared to lower power devices - Larger physical footprint - More complex drive circuitry required
Working Principles: The IXTP1R4N100P operates based on the principles of field-effect transistors, utilizing the control of the electric field within a semiconductor to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Motor drives - Power supplies - Inverters - Welding equipment - Renewable energy systems
Detailed and Complete Alternative Models: - IRFP250N - STP55NF06L - FDPF33N25T
This MOSFET is widely used in high-power applications due to its excellent performance characteristics, making it a popular choice among design engineers seeking reliable and efficient power switching solutions.
[Word count: 287]
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXTP1R4N100P v technických řešeních
What is IXTP1R4N100P?
- IXTP1R4N100P is a high-power MOSFET transistor designed for use in various technical solutions requiring efficient power management.
What are the key specifications of IXTP1R4N100P?
- The key specifications of IXTP1R4N100P include a voltage rating of 1000V, a current rating of 1.4A, and a low on-state resistance for high efficiency.
In what technical applications can IXTP1R4N100P be used?
- IXTP1R4N100P is commonly used in applications such as power supplies, motor control, inverters, and other high-power switching circuits.
What are the thermal characteristics of IXTP1R4N100P?
- IXTP1R4N100P has excellent thermal performance with low thermal resistance, allowing it to operate at high power levels without overheating.
How does IXTP1R4N100P compare to similar MOSFET transistors?
- Compared to similar MOSFET transistors, IXTP1R4N100P offers lower on-state resistance, higher voltage ratings, and superior thermal performance.
What are the recommended operating conditions for IXTP1R4N100P?
- The recommended operating conditions for IXTP1R4N100P include a maximum voltage of 1000V, a maximum current of 1.4A, and a suitable heat sink for optimal thermal management.
Can IXTP1R4N100P be used in automotive applications?
- Yes, IXTP1R4N100P can be used in automotive applications such as electric vehicle powertrains, battery management systems, and charging infrastructure.
Does IXTP1R4N100P require any special driver circuitry?
- IXTP1R4N100P can be driven by standard MOSFET driver circuits, but it is important to ensure proper gate drive voltage and current for optimal performance.
What are the reliability and longevity characteristics of IXTP1R4N100P?
- IXTP1R4N100P is designed for high reliability and longevity, with robust construction and materials to withstand demanding operating conditions.
Where can I find detailed application notes and reference designs for using IXTP1R4N100P?
- Detailed application notes and reference designs for IXTP1R4N100P can be found on the manufacturer's website or by contacting their technical support team.