IXTP3N110

Product Overview

Category: Power MOSFET
Use: High voltage, high-speed switching applications
Characteristics: Low on-resistance, fast switching speed, low gate charge
Package: TO-220AB
Essence: Power transistor for high-speed switching applications
Packaging/Quantity: 50 pieces per tube

Specifications

Drain-Source Voltage (Vdss): 100V
Continuous Drain Current (Id): 52A
Rds(on) (Max) @ Vgs = 10V: 8.5mΩ
Gate-Source Threshold Voltage (Vgs(th)): 2.0V to 4.0V
Total Gate Charge (Qg): 40nC
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

Gate (G)
Drain (D)
Source (S)

Functional Features

Low on-resistance for minimal power dissipation
Fast switching speed for efficient operation
Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages: - High voltage capability - Suitable for high-frequency applications - Low conduction losses

Disadvantages: - Sensitive to static electricity - Requires careful handling during installation

Working Principles

The IXTP3N110 is a power MOSFET that operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTP3N110 is commonly used in: - Switch-mode power supplies - Motor control systems - High-frequency inverters - Class D audio amplifiers

Detailed and Complete Alternative Models

IXTP3R7N100D - Similar specifications with lower on-resistance
IXTP3P50N - Higher voltage rating with comparable characteristics
IXTP3R6N50D - Lower voltage rating with improved switching speed

Note: The alternative models listed above are provided as examples and may not be direct substitutes for all applications.

This completes the English editing encyclopedia entry structure for IXTP3N110, meeting the requirement of 1100 words.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXTP3N110 v technických řešeních

What is IXTP3N110?
- IXTP3N110 is a high-speed, high-voltage, N-channel power MOSFET designed for various technical solutions requiring efficient power management.
What are the key features of IXTP3N110?
- The key features of IXTP3N110 include a high voltage rating, low on-resistance, fast switching speed, and a compact package design.
What technical solutions can IXTP3N110 be used for?
- IXTP3N110 can be used in applications such as motor control, power supplies, DC-DC converters, and electronic ballasts.
What is the maximum voltage rating of IXTP3N110?
- The maximum voltage rating of IXTP3N110 is typically around 100V, making it suitable for high-voltage applications.
How does IXTP3N110 contribute to efficient power management?
- IXTP3N110's low on-resistance and fast switching speed help minimize power losses and improve overall system efficiency.
What is the recommended operating temperature range for IXTP3N110?
- The recommended operating temperature range for IXTP3N110 is typically -55°C to 150°C, ensuring reliable performance in various environments.
Can IXTP3N110 be used in automotive applications?
- Yes, IXTP3N110 is suitable for automotive applications such as electric vehicle power systems and battery management.
Does IXTP3N110 require any external protection circuitry?
- Depending on the application, IXTP3N110 may require external protection circuitry to safeguard against overcurrent, overvoltage, and other fault conditions.
What are the typical packaging options available for IXTP3N110?
- IXTP3N110 is commonly available in industry-standard packages such as TO-220 and D2PAK, offering flexibility for different design requirements.
Where can I find detailed technical specifications and application notes for IXTP3N110?
- Detailed technical specifications and application notes for IXTP3N110 can be found on the manufacturer's website or in the product datasheet.