IXTR90P10P

Product Overview

Category: Integrated Circuit (IC)
Use: Power MOSFET
Characteristics: High power handling, low on-resistance, compact package
Package: TO-220AB
Essence: Power management
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

Voltage Rating: 100V
Current Rating: 90A
On-Resistance: 10mΩ
Operating Temperature: -55°C to 175°C
Gate Charge: 110nC

Detailed Pin Configuration

The IXTR90P10P follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High current handling capability
Low on-resistance for efficient power management
Wide operating temperature range
Fast switching speed

Advantages and Disadvantages

Advantages

High power handling capacity
Low on-resistance for minimal power loss
Suitable for high-current applications

Disadvantages

Relatively large package size compared to SMD alternatives
Higher parasitic capacitance compared to some newer models

Working Principles

The IXTR90P10P operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current through the device. When a suitable voltage is applied to the gate terminal, it allows the current to flow between the drain and source terminals, effectively acting as a switch for power management applications.

Detailed Application Field Plans

The IXTR90P10P is commonly used in various power management applications, including: - Switching power supplies - Motor control - Inverters - DC-DC converters - Automotive systems

Detailed and Complete Alternative Models

Some alternative models to the IXTR90P10P include: - IRF540N - FDP8870 - STP90NF03L

In conclusion, the IXTR90P10P is a high-power MOSFET with excellent current handling capabilities, making it suitable for a wide range of power management applications. Its low on-resistance and robust construction make it a reliable choice for demanding environments.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXTR90P10P v technických řešeních

What is IXTR90P10P?
- IXTR90P10P is a high-power, high-frequency RF transistor designed for use in technical solutions such as RF amplifiers and transmitters.
What are the key specifications of IXTR90P10P?
- The key specifications include a frequency range of X GHz, a power output of Y watts, and a voltage rating of Z volts.
What applications is IXTR90P10P suitable for?
- IXTR90P10P is suitable for applications such as radar systems, communication equipment, and industrial RF amplifiers.
What are the thermal characteristics of IXTR90P10P?
- The thermal characteristics include a maximum junction temperature of T degrees Celsius and a thermal resistance of R degrees per watt.
How does IXTR90P10P compare to other similar RF transistors?
- IXTR90P10P offers higher power output and better efficiency compared to other similar RF transistors in its class.
What are the recommended operating conditions for IXTR90P10P?
- The recommended operating conditions include a specific biasing voltage, current, and temperature range for optimal performance.
Does IXTR90P10P require any special handling or mounting considerations?
- Yes, IXTR90P10P may require careful attention to grounding, heat sinking, and RF layout to ensure proper performance and reliability.
Are there any known limitations or failure modes associated with IXTR90P10P?
- While IXTR90P10P is robust, it may exhibit reduced performance under certain load mismatch conditions or excessive heat.
Can IXTR90P10P be used in pulsed RF applications?
- Yes, IXTR90P10P is suitable for pulsed RF applications with appropriate pulse width and duty cycle considerations.
Where can I find detailed application notes and reference designs for using IXTR90P10P?
- Detailed application notes and reference designs for IXTR90P10P can be found on the manufacturer's website or through authorized distributors.