LTC4447EDD#PBF

Product Overview

Category: Integrated Circuit (IC)

Use: Power Management

Characteristics: - High voltage gate driver - Low quiescent current - Fast rise and fall times - Wide input voltage range - Adjustable output voltage - Protection features (overcurrent, overvoltage, undervoltage lockout)

Package: DFN-8 (3mm x 3mm)

Essence: The LTC4447EDD#PBF is a high voltage gate driver IC designed for power management applications. It provides fast switching speeds and protection features to ensure efficient and reliable operation.

Packaging/Quantity: The LTC4447EDD#PBF is available in a DFN-8 package and is typically sold in reels of 2500 units.

Specifications

• Input Voltage Range: 4.5V to 18V
• Output Voltage Range: 0V to VCC
• Maximum Supply Current: 2.5mA
• Rise/Fall Time: 10ns
• Operating Temperature Range: -40°C to 125°C

Detailed Pin Configuration

The LTC4447EDD#PBF has the following pin configuration:

1. GATE: Gate drive output
2. GND: Ground
3. VIN: Input voltage
4. VCC: Supply voltage
5. NC: No connection
6. UVLO: Undervoltage lockout
7. OCSET: Overcurrent set
8. VOUT: Output voltage

Functional Features

• High voltage gate driver capable of driving N-channel MOSFETs and IGBTs
• Low quiescent current minimizes power consumption
• Fast rise and fall times enable efficient switching
• Wide input voltage range allows for versatile applications
• Adjustable output voltage provides flexibility in system design
• Protection features ensure safe operation under various conditions

Advantages and Disadvantages

Advantages: - High voltage capability - Low power consumption - Fast switching speeds - Wide input voltage range - Adjustable output voltage - Protection features for enhanced reliability

Disadvantages: - Limited to driving N-channel MOSFETs and IGBTs - May require additional external components for certain applications

Working Principles

The LTC4447EDD#PBF is a high voltage gate driver that amplifies the control signal from a microcontroller or other control circuitry to drive the gate of an N-channel MOSFET or IGBT. It operates by providing a high current pulse to rapidly charge and discharge the gate capacitance, allowing for efficient switching of the power device.

The device incorporates protection features such as overcurrent and overvoltage protection, which help safeguard the power device and the overall system. The undervoltage lockout feature ensures that the gate driver does not operate below a certain voltage threshold, preventing improper operation during low voltage conditions.

Detailed Application Field Plans

The LTC4447EDD#PBF is commonly used in various power management applications, including:

1. Switching Power Supplies
2. Motor Control Systems
3. LED Lighting
4. Battery Charging Systems
5. DC-DC Converters
6. Solar Power Systems

In these applications, the LTC4447EDD#PBF provides efficient and reliable gate drive for power devices, enabling precise control and high-performance operation.

Detailed and Complete Alternative Models

1. LTC4446EDD#PBF
2. LTC4448EDD#PBF
3. LTC4449EDD#PBF
4. LTC4450EDD#PBF
5. LTC4451EDD#PBF

These alternative models offer similar functionality and characteristics to the LTC4447EDD#PBF, providing options for different system requirements and design considerations.

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