MAGX-001214-250L00

Product Overview

Category

MAGX-001214-250L00 belongs to the category of high-power GaN-on-SiC HEMT (High Electron Mobility Transistor) devices.

Use

It is used in high-frequency, high-efficiency power amplifiers for various applications such as radar systems, communication systems, and industrial heating systems.

Characteristics

• High power density
• High efficiency
• Wide bandwidth
• High gain
• Excellent thermal conductivity

Package

The device is typically offered in a hermetic flange-mount package, ensuring reliable performance in harsh environmental conditions.

Essence

MAGX-001214-250L00 is essential for achieving high-power amplification with minimal loss and heat dissipation.

Packaging/Quantity

The device is usually supplied individually in protective packaging to prevent damage during transportation and handling.

Specifications

• Frequency Range: 1.2 GHz - 1.4 GHz
• Output Power: 250 W
• Voltage: 50 V
• Gain: 15 dB
• Efficiency: 70%
• Thermal Resistance: 0.5 °C/W

Detailed Pin Configuration

The pin configuration of MAGX-001214-250L00 includes input, output, gate, drain, and bias pins, each serving specific functions in the amplification process.

Functional Features

• High linearity
• Robustness against voltage spikes
• Low distortion
• Fast switching speed
• Built-in ESD protection

Advantages and Disadvantages

Advantages

• High power output
• Efficient power utilization
• Wide operating bandwidth
• Compact form factor
• Enhanced reliability

Disadvantages

• Higher cost compared to traditional power transistors
• Requires careful thermal management due to high power density

Working Principles

MAGX-001214-250L00 operates based on the principles of Gallium Nitride (GaN) technology, utilizing the high electron mobility of the material to achieve high-frequency, high-power amplification with minimal losses.

Detailed Application Field Plans

Radar Systems

The device can be integrated into radar systems for military and civilian applications, providing high-power amplification for long-range detection and tracking.

Communication Systems

In communication systems, MAGX-001214-250L00 enables efficient signal amplification, contributing to improved data transmission and reception capabilities.

Industrial Heating Systems

For industrial heating applications, the device can be utilized to generate high-frequency electromagnetic waves for rapid and uniform heating processes.

Detailed and Complete Alternative Models

• MAGX-001214-100L00: Lower power version suitable for applications requiring reduced power output.
• MAGX-001214-500L00: Higher power version for applications demanding even greater power amplification.

In conclusion, MAGX-001214-250L00 is a high-power GaN-on-SiC HEMT device offering exceptional performance in various high-frequency applications, despite its higher cost and thermal management requirements. Its wide range of applications and availability of alternative models make it a versatile choice for power amplification needs.

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