MX25R6435FM2JL0

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Integrated circuit (IC) package
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 108 MHz
• Write Speed: Up to 54 MHz
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The MX25R6435FM2JL0 flash memory IC has the following pin configuration:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-Speed Performance: The MX25R6435FM2JL0 offers fast read and write speeds, allowing for efficient data transfer.
• Low Power Consumption: This flash memory consumes minimal power, making it suitable for battery-powered devices.
• Reliable Data Storage: With a high endurance of up to 100,000 erase/program cycles and data retention of up to 20 years, it ensures reliable long-term storage.
• Flexible Interface: The SPI interface enables easy integration with various microcontrollers and other devices.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for quick data access - Low power consumption for energy-efficient operation - Reliable and durable memory with high endurance and data retention

Disadvantages: - Limited storage capacity compared to other flash memory options - Requires an external controller for data retrieval and management

Working Principles

The MX25R6435FM2JL0 flash memory operates based on the principles of floating-gate transistors. It uses electrically isolated gates to store and retrieve digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. During reading, the stored charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

The MX25R6435FM2JL0 flash memory finds applications in various electronic devices, including but not limited to:

1. Smartphones and tablets: Used for storing operating system files, applications, and user data.
2. Automotive systems: Enables firmware updates, data logging, and configuration storage in automotive electronics.
3. IoT devices: Provides non-volatile memory for sensor data storage, firmware updates, and device configuration.
4. Industrial equipment: Used for storing program code, configuration settings, and data logging in industrial control systems.

Detailed and Complete Alternative Models

1. MX25R3235F: 32 Megabits (4 Megabytes) flash memory with similar specifications.
2. MX25R8035F: 80 Megabits (10 Megabytes) flash memory with higher capacity.
3. MX25R1635F: 16 Megabits (2 Megabytes) flash memory with lower capacity.
4. MX25R12835F: 128 Megabits (16 Megabytes) flash memory with higher capacity.

These alternative models offer different storage capacities to cater to diverse application requirements.

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