MX29GL640EHXFI-70G

Product Overview

Category

The MX29GL640EHXFI-70G belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The MX29GL640EHXFI-70G offers a storage capacity of 64 megabits (8 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a maximum operating frequency of 70 MHz, this flash memory device ensures efficient data transfer.
• Reliable performance: The MX29GL640EHXFI-70G is designed to provide reliable and consistent performance, ensuring the integrity and security of stored data.
• Low power consumption: This flash memory device is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: The MX29GL640EHXFI-70G is available in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MX29GL640EHXFI-70G is typically packaged in a surface-mount package (SOP) or a ball grid array (BGA) package. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Operating Frequency: Up to 70 MHz
• Supply Voltage: 2.7V - 3.6V
• Interface: Parallel
• Package Type: SOP/BGA

Detailed Pin Configuration

The MX29GL640EHXFI-70G features a parallel interface with multiple pins for data transfer and control. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address lines for memory access
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. OE#: Output enable control signal
8. RP#/BYTE#: Reset/byte control signal
9. WP#/ACC: Write protect/access control signal

Functional Features

• Erase and Program Operations: The MX29GL640EHXFI-70G supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory device offers the option to lock specific blocks of memory, providing enhanced security for critical data.
• Read and Write Protection: The MX29GL640EHXFI-70G includes features to protect against unauthorized read and write operations, ensuring data integrity.
• High Reliability: With built-in error correction codes (ECC) and wear-leveling algorithms, this flash memory device ensures reliable and durable data storage.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Higher cost compared to some other types of memory

Working Principles

The MX29GL640EHXFI-70G utilizes a floating-gate transistor technology to store data. It employs a combination of electric fields and charge trapping to represent binary information. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. During read operations, the stored charges are detected, allowing retrieval of the stored data.

Detailed Application Field Plans

The MX29GL640EHXFI-70G can be used in various applications that require non-volatile storage, including: - Mobile devices (smartphones, tablets) - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MX29GL640EHTI-70G: Similar to the MX29GL640EHXFI-70G, this model offers the same specifications but comes in a different package type (TSOP).
2. MX29GL640ELTI-70G: Another alternative with identical specifications, but packaged in a different form factor (LGA).

These alternative models provide flexibility in choosing the most suitable package type for specific application requirements.

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