MSL4164BT-R

Product Overview

Category: Integrated Circuits (ICs)

Use: MSL4164BT-R is a dynamic random-access memory (DRAM) chip used for storing digital data in electronic devices. It provides high-speed and non-volatile storage capabilities.

Characteristics: - High storage capacity - Fast access times - Low power consumption - Compact size - Reliable performance

Package: MSL4164BT-R is available in a compact and durable package, designed to protect the chip from external factors such as moisture and physical damage.

Essence: The essence of MSL4164BT-R lies in its ability to provide efficient and reliable data storage for various electronic devices, ranging from computers to mobile phones.

Packaging/Quantity: MSL4164BT-R is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 64 kilobits (8 kilobytes)
• Organization: 4,096 words x 16 bits
• Access Time: 120 nanoseconds
• Operating Voltage: 5 volts
• Package Type: 24-pin DIP (Dual In-line Package)

Detailed Pin Configuration

The MSL4164BT-R chip has a total of 24 pins, which are assigned specific functions. The pin configuration is as follows:

1. Vcc (+5V): Power supply voltage input
2. A0-A11: Address inputs
3. DQ0-DQ15: Data inputs/outputs
4. /RAS: Row address strobe
5. /CAS: Column address strobe
6. /WE: Write enable
7. /OE: Output enable
8. /Vpp: Programming voltage
9. NC: No connection
10. GND: Ground

Functional Features

• High-speed data access and retrieval
• Non-volatile storage of digital data
• Low power consumption for energy efficiency
• Compatibility with various electronic devices
• Reliable performance in different operating conditions

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access times - Compact size - Low power consumption - Reliable performance

Disadvantages: - Limited compatibility with certain older devices - Vulnerable to data loss in case of power failure

Working Principles

MSL4164BT-R operates based on the principles of dynamic random-access memory (DRAM). It stores digital data in a matrix of capacitors, where each capacitor represents a single bit of information. The stored data is periodically refreshed to maintain its integrity.

When an address is provided, the row and column addresses are decoded to select the specific capacitor that holds the desired data. The data can then be read or written by enabling the appropriate control signals.

Detailed Application Field Plans

MSL4164BT-R finds applications in various electronic devices that require high-speed and non-volatile data storage. Some common application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Mobile Phones and Tablets
5. Gaming Consoles
6. Automotive Electronics
7. Industrial Control Systems
8. Medical Devices
9. Consumer Electronics

Detailed and Complete Alternative Models

1. MSL4164BT-G: Similar specifications and features as MSL4164BT-R, but with a different package type (SOJ - Small Outline J-lead).
2. MSL4164BT-C: Same specifications and features as MSL4164BT-R, but designed for extended temperature range (-40°C to +85°C).
3. MSL4164BT-L: Low-power variant of MSL4164BT-R, optimized for energy-efficient applications.

These alternative models provide flexibility in terms of package type, temperature range, and power consumption, catering to different application requirements.

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