EDB8164B4PT-1D-F-D

Overview

Product Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed performance - Low power consumption - Compact size - Reliable data storage

Package: Dual In-line Package (DIP)

Essence: The EDB8164B4PT-1D-F-D is a memory IC designed to provide efficient and reliable data storage for electronic devices.

Packaging/Quantity: Each package contains one EDB8164B4PT-1D-F-D memory module.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 64 kilobits (8 kilobytes)
• Organization: 8,192 words x 8 bits
• Operating Voltage: 5V
• Access Time: 150 nanoseconds
• Refresh Mode: Auto-refresh
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The EDB8164B4PT-1D-F-D memory module has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | Vcc | Power supply voltage | | 2 | A0 | Address input bit 0 | | 3 | A1 | Address input bit 1 | | 4 | A2 | Address input bit 2 | | 5 | A3 | Address input bit 3 | | 6 | A4 | Address input bit 4 | | 7 | A5 | Address input bit 5 | | 8 | A6 | Address input bit 6 | | 9 | A7 | Address input bit 7 | | 10 | /RAS | Row Address Strobe | | 11 | /CAS | Column Address Strobe | | 12 | /WE | Write Enable | | 13-20 | D0-D7 | Data input/output lines | | 21 | Vss | Ground |

Functional Features

• High-speed data access and retrieval
• Auto-refresh capability for maintaining data integrity
• Low power consumption for energy-efficient operation
• Compact size for space-constrained applications
• Reliable data storage with error correction capabilities

Advantages

• Fast data access time enhances overall system performance.
• Auto-refresh feature ensures data integrity without manual intervention.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into small form factor designs.
• Error correction capabilities enhance data reliability.

Disadvantages

• Limited memory capacity compared to modern memory modules.
• Incompatibility with systems requiring higher voltage levels.
• Relatively slower access time compared to newer memory technologies.

Working Principles

The EDB8164B4PT-1D-F-D memory module operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The memory cells are organized into rows and columns, and data is accessed by providing the appropriate row and column addresses.

During read or write operations, the row address strobe (/RAS) and column address strobe (/CAS) signals are used to select the desired memory cell. The write enable (/WE) signal determines whether the operation is a read or write. Data is transferred through the data input/output lines (D0-D7).

To maintain data integrity, the memory module periodically performs auto-refresh cycles, which refreshes the charge stored in the capacitors. This prevents data loss due to charge leakage.

Detailed Application Field Plans

The EDB8164B4PT-1D-F-D memory module finds applications in various electronic devices, including but not limited to: - Personal computers - Printers - Communication equipment - Industrial control systems - Consumer electronics

Its compact size and reliable data storage make it suitable for space-constrained applications where efficient memory management is crucial.

Alternative Models

For users seeking alternative memory modules with similar specifications and functionality, the following models can be considered: - EDB8164B4PT-1D-F-E - EDB8164B4PT-1D-F-C - EDB8164B4PT-1D-F-G

These models offer comparable performance and compatibility with a range of electronic devices.

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