M29F800FB52M3F2 TR

Product Overview

Category

The M29F800FB52M3F2 TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F800FB52M3F2 TR retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The device provides quick access to stored data, ensuring efficient operation.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The M29F800FB52M3F2 TR is designed to consume minimal power during operation.

Package

This product comes in a small outline integrated circuit (SOIC) package, which ensures easy integration into electronic circuits.

Essence

The essence of the M29F800FB52M3F2 TR lies in its ability to store and retrieve data reliably and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

The M29F800FB52M3F2 TR is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 1M x 8 bits
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The M29F800FB52M3F2 TR has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. WP#/ACC: Write protect/acceleration control signal
9. RY/BY#: Ready/busy output status signal
10. VSS: Ground

Functional Features

• Erase and Program Operations: The M29F800FB52M3F2 TR supports both erase and program operations, allowing for flexible data manipulation.
• Sector Architecture: It is organized into multiple sectors, enabling selective erasure and programming of specific memory areas.
• Hardware Data Protection: This device incorporates hardware protection mechanisms to prevent accidental data corruption during power fluctuations or other system failures.
• High-Speed Read Operation: The M29F800FB52M3F2 TR offers fast read access times, ensuring efficient data retrieval.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even without power.
• High storage capacity allows for ample data storage.
• Fast access time enables quick data retrieval.
• Reliable endurance ensures long-lasting performance.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited erase and program cycle endurance compared to some newer memory technologies.
• Parallel interface may not be suitable for all applications requiring high-speed data transfer.

Working Principles

The M29F800FB52M3F2 TR utilizes flash memory technology to store data. It employs a floating-gate transistor structure that can trap and release electrical charges, representing binary information (0s and 1s). During programming, the device applies high voltages to specific memory cells, altering their charge states. Erasing is achieved by removing the charges from selected cells. The stored data can be accessed by applying appropriate control signals and reading the electrical state of each memory cell.

Detailed Application Field Plans

The M29F800FB52M3F2 TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. M29F800FB55M3F2 TR
2. M29F800FB70M3F2 TR
3. M29F800FB90M3F2 TR
4. M29F800FT70N6F2 TR
5. M29F800FT90N6F2 TR

These alternative models offer similar functionality and characteristics to the M29F800FB52M3F2 TR, providing options for different storage capacities or performance requirements.

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