Micron Technology Inc.
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M29F800FT55M3F2 TR
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M29F800FT55M3F2 TR

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Non-volatile Memory
  • Characteristics: High-density, Flash memory
  • Package: Surface Mount Technology (SMT)
  • Essence: Reliable and high-performance memory solution
  • Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

  • Memory Type: Flash
  • Memory Size: 8 Megabits (1 Megabyte)
  • Organization: 1M x 8 bits
  • Supply Voltage: 2.7V to 3.6V
  • Access Time: 55 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Package Type: TSOP48

Detailed Pin Configuration

The M29F800FT55M3F2 TR has a total of 48 pins arranged as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. VSS (Ground)
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. VCC (Power)
  19. DQ0
  20. DQ1
  21. DQ2
  22. DQ3
  23. DQ4
  24. DQ5
  25. DQ6
  26. DQ7
  27. WE# (Write Enable)
  28. CE# (Chip Enable)
  29. OE# (Output Enable)
  30. BYTE#
  31. VPP (Programming Voltage)
  32. RP#
  33. RE#
  34. WP#
  35. RESET#
  36. RY/BY#
  37. VSS (Ground)
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-density memory solution for data storage
  • Non-volatile nature ensures data retention even without power
  • Fast access time for efficient data retrieval
  • Reliable and durable flash memory technology
  • Low power consumption for energy efficiency

Advantages and Disadvantages

Advantages: - High storage capacity - Non-volatile memory retains data without power - Fast access time for quick data retrieval - Reliable and durable flash memory technology

Disadvantages: - Limited write endurance compared to other memory types - Higher cost per bit compared to traditional RAM

Working Principles

The M29F800FT55M3F2 TR is based on Flash memory technology, which utilizes floating-gate transistors to store data. It operates by applying electrical charges to the floating gates, altering their threshold voltage and allowing data to be stored as binary information. The memory can be read, written, and erased electronically, making it a versatile and reliable solution for non-volatile data storage.

Detailed Application Field Plans

The M29F800FT55M3F2 TR is commonly used in various applications, including:

  1. Consumer Electronics: Used in digital cameras, MP3 players, and portable gaming devices for data storage.
  2. Automotive Systems: Integrated into automotive infotainment systems, navigation units, and engine control modules for storing critical data.
  3. Industrial Automation: Utilized in programmable logic controllers (PLCs), robotics, and industrial control systems for data storage and firmware updates.
  4. Communication Devices: Incorporated into routers, switches, and network equipment for configuration storage and firmware updates.

Detailed and Complete Alternative Models

  1. M29F800FB5AN6E2
  2. M29F800FT70N6F2
  3. M29F800FB5AN6F2
  4. M29F800FT55M3F1
  5. M29F800FT70N6F1

These alternative models offer similar specifications and functionality to the M29F800FT55M3F2 TR, providing flexibility in choosing the most suitable memory solution for specific applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací M29F800FT55M3F2 TR v technických řešeních

Sure! Here are 10 common questions and answers related to the application of M29F800FT55M3F2 TR in technical solutions:

  1. Q: What is the M29F800FT55M3F2 TR? A: The M29F800FT55M3F2 TR is a specific model of flash memory chip manufactured by a company called STMicroelectronics.

  2. Q: What is the capacity of the M29F800FT55M3F2 TR? A: The M29F800FT55M3F2 TR has a capacity of 8 megabits (1 megabyte) of non-volatile memory.

  3. Q: What is the operating voltage range for the M29F800FT55M3F2 TR? A: The M29F800FT55M3F2 TR operates within a voltage range of 2.7V to 3.6V.

  4. Q: What is the maximum clock frequency supported by the M29F800FT55M3F2 TR? A: The M29F800FT55M3F2 TR supports a maximum clock frequency of 55 MHz.

  5. Q: What interface does the M29F800FT55M3F2 TR use? A: The M29F800FT55M3F2 TR uses a parallel interface with an 8-bit data bus.

  6. Q: Can the M29F800FT55M3F2 TR be used for code storage in microcontrollers? A: Yes, the M29F800FT55M3F2 TR can be used for code storage in microcontrollers or other embedded systems.

  7. Q: Is the M29F800FT55M3F2 TR suitable for high-speed data storage applications? A: Yes, the M29F800FT55M3F2 TR is designed to support high-speed read and write operations, making it suitable for data storage applications.

  8. Q: Does the M29F800FT55M3F2 TR have any built-in security features? A: No, the M29F800FT55M3F2 TR does not have any built-in security features. Additional measures may be required to ensure data security.

  9. Q: Can the M29F800FT55M3F2 TR be used in automotive applications? A: Yes, the M29F800FT55M3F2 TR is qualified for automotive applications and can withstand harsh environmental conditions.

  10. Q: Are there any specific programming requirements for the M29F800FT55M3F2 TR? A: Yes, the M29F800FT55M3F2 TR requires a specific programming algorithm and voltage levels to ensure proper operation. The datasheet provides detailed instructions for programming the chip.

Please note that these answers are general and may vary depending on the specific application and requirements. It is always recommended to refer to the official documentation and datasheet for accurate information.