M29W064FT70N3E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Organization: 8M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years

Detailed Pin Configuration

The M29W064FT70N3E flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A22: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect or accelerated programming control signal
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Low power consumption
• Automatic program and erase algorithms
• Sector and block erase capability
• Hardware data protection features
• Software data protection features
• Erase suspend/resume functionality

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access times
• Non-volatile memory retains data even when power is disconnected
• Low power consumption
• Reliable and durable

Disadvantages

• Limited write endurance
• Relatively higher cost compared to other storage technologies
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

The M29W064FT70N3E flash memory operates based on the principles of floating-gate transistors. It uses a combination of electric fields and charge trapping to store and retrieve digital information. When writing data, electrons are trapped in the floating gate, altering the transistor's behavior. During read operations, the stored charge is measured to determine the stored data.

Detailed Application Field Plans

The M29W064FT70N3E flash memory is widely used in various electronic devices, including:

1. Mobile phones
2. Digital cameras
3. Portable media players
4. Solid-state drives (SSDs)
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. M29W064FB70N6E

   • Similar specifications and functionality
   • Different package type

2. M29W064GB70N6E

   • Higher capacity (128 Megabits)
   • Similar specifications and functionality
   • Different package type

3. M29W064DT70N6E

   • Lower access time (55 nanoseconds)
   • Similar specifications and functionality
   • Different package type

4. M29W064ET70N6E

   • Higher operating temperature range (-40°C to +105°C)
   • Similar specifications and functionality
   • Different package type

(Note: The above alternative models are provided for reference purposes and may not be an exhaustive list.)

This concludes the encyclopedia entry for the M29W064FT70N3E flash memory IC.