M29W320ET70ZE6F TR

Product Overview

Category

The M29W320ET70ZE6F TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The M29W320ET70ZE6F TR retains stored data even when power is disconnected.
• High capacity: This flash memory device has a storage capacity of 32 megabits (4 megabytes).
• Fast read and write speeds: The M29W320ET70ZE6F TR offers high-speed data transfer, enabling quick access to stored information.
• Low power consumption: It operates efficiently, consuming minimal power during operation.
• Compact package: The M29W320ET70ZE6F TR is available in a small form factor, making it suitable for space-constrained applications.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Package and Quantity

The M29W320ET70ZE6F TR is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

• Memory Type: Flash
• Capacity: 32 megabits (4 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The M29W320ET70ZE6F TR features a 48-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. VSS (Ground)
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. WE# (Write Enable)
35. CE# (Chip Enable)
36. OE# (Output Enable)
37. RP# (Reset/Power-down)
38. BYTE#
39. VCC (Power Supply)
40. VPP (Program Supply Voltage)
41. NC (No Connection)
42. NC (No Connection)
43. NC (No Connection)
44. NC (No Connection)
45. NC (No Connection)
46. NC (No Connection)
47. NC (No Connection)
48. NC (No Connection)

Functional Features

• Block Erase: The M29W320ET70ZE6F TR supports block erase operations, allowing for efficient erasure of large data segments.
• Page Program: It enables fast programming of individual memory pages, facilitating quick data storage.
• Sector Protection: This flash memory device offers sector protection mechanisms to prevent accidental modification or erasure of critical data.
• Read and Write Operations: The M29W320ET70ZE6F TR allows for high-speed read and write operations, ensuring rapid access to stored information.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact form factor
• RoHS compliant

Disadvantages

• Limited endurance (100,000 program/erase cycles)
• Requires external programming voltage (VPP)

Working Principles

The M29W320ET70ZE6F TR utilizes a floating gate transistor technology to store data. It employs a combination of electrical charges to represent binary values (0s and 1s). The presence or absence of charge in the floating gate determines the stored data. During programming, electrons are injected into or removed from the floating gate to modify its charge state. This allows for data storage and retrieval operations.

Detailed Application Field Plans

The M29W320ET70ZE6F TR is widely used in various electronic devices that require non-volatile memory for data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players utilize this flash memory device to store operating systems, applications, and user data.
2. Digital Cameras: The