M29W400DB55N6F TR

Product Overview

Category

The M29W400DB55N6F TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The M29W400DB55N6F TR retains stored data even when power is turned off.
• High capacity: This flash memory device has a storage capacity of 4 gigabits (512 megabytes).
• Fast data transfer: It offers high-speed read and write operations, allowing for quick access to stored data.
• Reliable performance: The M29W400DB55N6F TR ensures data integrity and durability through advanced error correction techniques.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.

Package and Quantity

The M29W400DB55N6F TR is available in a compact surface-mount package. Each package contains one flash memory device.

Specifications

• Memory type: NOR Flash
• Capacity: 4 Gb (512 MB)
• Organization: 8M x 16 bits
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Interface: Parallel
• Access time: 55 ns
• Erase/Program cycles: 100,000 cycles

Detailed Pin Configuration

The M29W400DB55N6F TR has the following pin configuration:

1. VCC: Power supply
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#: Ready/Busy
8. RESET#: Reset
9. WP#: Write protect
10. VSS: Ground

Functional Features

• Block Erase: The M29W400DB55N6F TR supports block erase operations, allowing for efficient erasure of large data blocks.
• Page Program: It enables fast programming of individual memory pages, facilitating flexible data storage and modification.
• Sector Protection: This flash memory device offers sector protection mechanisms to prevent accidental overwriting or erasure of critical data.
• Software Reset: The RESET# pin allows for a software-initiated reset, enabling system-level control and recovery.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer speed
• Low power consumption
• Reliable performance and durability
• Sector protection mechanism for data integrity

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Requires parallel interface, which may not be compatible with all devices

Working Principles

The M29W400DB55N6F TR utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit of information. When data is written, the memory cells are electrically programmed or erased based on the desired state. During read operations, the stored data is retrieved by sensing the electrical charge in the memory cells.

Detailed Application Field Plans

The M29W400DB55N6F TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players utilize this flash memory for storing operating systems, applications, and user data.
2. Digital Cameras: Flash memory provides high-speed storage for capturing and storing photos and videos.
3. Automotive Electronics: Used in infotainment systems, navigation units, and instrument clusters for data storage and firmware updates.
4. Industrial Control Systems: Flash memory is employed in programmable logic controllers (PLCs) and other control systems for storing configuration data and program code.

Detailed and Complete Alternative Models

1. M29W400DB55N6E TR
2. M29W400DT70N6F TR
3. M29W400DT70N6E TR
4. M29W400DT70N6A TR
5. M29W400DT70N6B TR

These alternative models offer similar specifications and functionality to the M29W400DB55N6F TR, providing options for different application requirements.

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