M29W400DB70ZE6F TR

Product Overview

Category

M29W400DB70ZE6F TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W400DB70ZE6F TR offers a storage capacity of 4 gigabits (512 megabytes).
• Fast read and write speeds: Enables quick access to stored data.
• Compact package: The device is packaged in a small form factor, making it suitable for space-constrained applications.
• Low power consumption: Helps prolong battery life in portable devices.

Package and Quantity

The M29W400DB70ZE6F TR is typically available in a surface-mount package. The exact package type may vary depending on the manufacturer. It is commonly sold in quantities of one or more, depending on the customer's requirements.

Specifications

• Memory Type: Flash
• Capacity: 4 Gb (512 MB)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Pin Count: 48

Detailed Pin Configuration

The M29W400DB70ZE6F TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/acceleration input
10. VSS: Ground

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete pinout details.)

Functional Features

• Erase and Program Operations: The M29W400DB70ZE6F TR supports sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
• Error Correction Code (ECC): Built-in ECC ensures data integrity by detecting and correcting errors during read and write operations.
• Power-Saving Modes: The device offers various power-saving modes to minimize energy consumption when not in use.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact form factor
• Low power consumption
• Error correction capabilities

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29W400DB70ZE6F TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When reading data, the stored charges are measured to determine the binary values. During programming, high voltages are applied to inject or remove charges from the floating gates, altering their electrical characteristics.

Detailed Application Field Plans

The M29W400DB70ZE6F TR can be used in a wide range of applications, including: - Mobile devices (smartphones, tablets) - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Alternative Models

Here are some alternative models that offer similar functionality: - M29W400DB70N6F TR - M29W400DT70N6F TR - M29W400DB70N1F TR - M29W400DT70N1F TR

(Note: The availability and specifications of alternative models may vary. Please consult the manufacturer's documentation for detailed information.)

This entry provides an overview of the M29W400DB70ZE6F TR flash memory device, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.