M29W640GT70N3F TR

Product Overview

Category

M29W640GT70N3F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29W640GT70N3F TR retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient performance.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The M29W640GT70N3F TR operates on low power, making it suitable for battery-powered devices.

Package

The M29W640GT70N3F TR is available in a compact surface-mount package, which facilitates easy integration into electronic circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The M29W640GT70N3F TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Memory Size: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The M29W640GT70N3F TR features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. RESET#: Reset control
9. BYTE#: Byte/Word organization selection
10. WP#: Write protect control

Functional Features

• Erase and Program Operations: The M29W640GT70N3F TR supports both sector erase and byte/word programming operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors of the memory can be locked to prevent accidental erasure or modification.
• Status Register: The device includes a status register that provides information about the ongoing operations and device status.
• Automatic Page Write: It supports automatic page write operations, enhancing programming efficiency.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Flexible erase and program operations

Disadvantages

• Limited endurance (compared to other non-volatile memory technologies)
• Relatively higher cost per bit compared to some alternative memory options

Working Principles

The M29W640GT70N3F TR utilizes flash memory technology, which is based on the principle of trapping electric charges in floating gate transistors. These trapped charges represent binary data (0s and 1s) and can be read, erased, and programmed using specific electrical signals.

During programming, an electric charge is injected into the floating gate, altering its threshold voltage and storing the desired data. Erasing involves removing the trapped charges from the floating gate, resetting it to an unprogrammed state. The device's internal circuitry ensures accurate reading and manipulation of the stored data.

Detailed Application Field Plans

The M29W640GT70N3F TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

1. M29W640GL70N6E TR: Similar to M29W640GT70N3F TR, but with a different package type (TSOP vs. TSOP-I)
2. M29W640GL70N6F TR: Similar to M29W640GT70N3F TR, but with a different access time (70 ns vs. 90 ns)
3. M29W640GL70N6P TR: Similar to M29W640GT70N3F TR, but with a different supply voltage range (2.7V - 3.6V vs. 2.7V - 3.3V)

These alternative models offer similar functionality and can be considered as substitutes for the M29W640GT