Micron Technology Inc.
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M29W800DB45N6E
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M29W800DB45N6E

Product Overview

Category

M29W800DB45N6E belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Low power consumption
  • Compact size

Package

The M29W800DB45N6E flash memory device comes in a small form factor package, designed to fit seamlessly into electronic devices. It is typically packaged in a surface-mount technology (SMT) package.

Essence

The essence of M29W800DB45N6E lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

This flash memory device is usually sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

  • Memory Type: Flash
  • Capacity: 8 megabytes (MB)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP-48

Detailed Pin Configuration

The M29W800DB45N6E flash memory device has a total of 48 pins. Here is a detailed pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. BYTE#
  35. WE#
  36. CE#
  37. OE#
  38. RESET#
  39. RY/BY#
  40. DQ0
  41. DQ1
  42. DQ2
  43. DQ3
  44. DQ4
  45. DQ5
  46. DQ6
  47. DQ7
  48. GND

Functional Features

  • High-speed data transfer
  • Erase and program operations
  • Sector protection mechanism
  • Automatic sleep mode for power saving
  • Error correction code (ECC) support
  • Data retention for extended periods

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Compact size
  • Reliable data retention
  • Sector protection mechanism ensures data integrity

Disadvantages

  • Limited lifespan due to finite erase/write cycles
  • Higher cost compared to other types of memory

Working Principles

The M29W800DB45N6E flash memory device utilizes a floating-gate transistor technology to store digital data. It uses electrical charges to trap electrons in the floating gate, representing binary information (0s and 1s). The stored data can be read, erased, and programmed using specific voltage levels and control signals.

Detailed Application Field Plans

The M29W800DB45N6E flash memory device finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

  1. M29W800DB45N6F
  2. M29W800DT70N6E
  3. M29W800DT70N6F
  4. M29W800DT70N6T
  5. M29W800DT70N6B

These alternative models offer similar specifications and functionality to the M29W800DB45N6E flash memory device, providing options for different application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací M29W800DB45N6E v technických řešeních

Sure! Here are 10 common questions and answers related to the application of M29W800DB45N6E in technical solutions:

  1. Q: What is the M29W800DB45N6E? A: The M29W800DB45N6E is a flash memory device commonly used in various technical solutions.

  2. Q: What is the storage capacity of the M29W800DB45N6E? A: The M29W800DB45N6E has a storage capacity of 8 megabits (1 megabyte).

  3. Q: What is the operating voltage range for the M29W800DB45N6E? A: The M29W800DB45N6E operates within a voltage range of 2.7V to 3.6V.

  4. Q: Can the M29W800DB45N6E be used in industrial applications? A: Yes, the M29W800DB45N6E is suitable for use in industrial applications due to its reliability and durability.

  5. Q: What interface does the M29W800DB45N6E support? A: The M29W800DB45N6E supports a parallel interface for data transfer.

  6. Q: Is the M29W800DB45N6E compatible with other flash memory devices? A: Yes, the M29W800DB45N6E is compatible with other flash memory devices that use a similar interface.

  7. Q: Can the M29W800DB45N6E be reprogrammed multiple times? A: Yes, the M29W800DB45N6E is a rewritable flash memory device that can be reprogrammed multiple times.

  8. Q: What is the typical access time of the M29W800DB45N6E? A: The typical access time of the M29W800DB45N6E is around 70 nanoseconds.

  9. Q: Does the M29W800DB45N6E have built-in error correction capabilities? A: No, the M29W800DB45N6E does not have built-in error correction capabilities. External error correction techniques may be required.

  10. Q: Can the M29W800DB45N6E operate in extreme temperature conditions? A: Yes, the M29W800DB45N6E is designed to operate within a wide temperature range, making it suitable for use in various environments.

Please note that these answers are general and may vary depending on the specific application and requirements.