MT25TL512HBA8ESF-0AAT TR

Product Overview

Category

MT25TL512HBA8ESF-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT25TL512HBA8ESF-0AAT TR offers a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: This memory device has a high endurance and can withstand multiple read/write cycles without data corruption.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Compact package: The MT25TL512HBA8ESF-0AAT TR comes in a small form factor, allowing for easy integration into various electronic systems.

Packaging/Quantity

The MT25TL512HBA8ESF-0AAT TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with a standard quantity of 250 units per reel/tray.

Specifications

• Memory Type: NOR Flash
• Capacity: 512 Megabits (64 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Package Type: 8-pin SOIC

Detailed Pin Configuration

The MT25TL512HBA8ESF-0AAT TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Hold input for suspending ongoing operations
4. WP: Write protect input for protecting the memory content
5. SCK: Serial clock input for SPI communication
6. SI: Serial data input for SPI communication
7. SO: Serial data output for SPI communication
8. CS: Chip select input for device selection

Functional Features

• High-speed Read/Write Operations: The MT25TL512HBA8ESF-0AAT TR offers fast read and write speeds, enabling quick access to stored data.
• Sector Erase and Program: It supports sector-based erase and program operations, allowing for efficient management of data.
• Protection Mechanisms: This memory device includes hardware and software protection mechanisms to prevent unauthorized access or modification of data.
• Error Correction Code (ECC): ECC functionality is integrated into the device to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Compact form factor
• Reliable and durable

Disadvantages

• Limited write endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to some alternative memory options

Working Principles

The MT25TL512HBA8ESF-0AAT TR utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit of information. The memory cells can be electrically programmed and erased, allowing for data storage and modification. The device communicates with the host system using the Serial Peripheral Interface (SPI) protocol.

Detailed Application Field Plans

The MT25TL512HBA8ESF-0AAT TR is widely used in various applications, including: - Computer systems - Mobile devices (smartphones, tablets) - Automotive electronics - Industrial control systems - Internet of Things (IoT) devices - Medical equipment

Detailed and Complete Alternative Models

1. MT25QL512ABA8ESF-0AAT TR: Similar to the MT25TL512HBA8ESF-0AAT TR, this model offers a 512 Megabit capacity with SPI interface.
2. S25FL512SAGMFI001: This alternative model is also a 512 Megabit NOR flash memory device with SPI interface, manufactured by a different company.

These alternative models can be considered based on specific requirements and compatibility with the target system.

Word count: 552 words