MT28F004B3VG-8 T TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: Non-volatile, high-density, high-speed
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT28F004B3VG-8 T TR
• Memory Type: NAND Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The MT28F004B3VG-8 T TR has a total of 32 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. GND - Ground
19. DQ0 - Data Input/Output
20. DQ1 - Data Input/Output
21. DQ2 - Data Input/Output
22. DQ3 - Data Input/Output
23. DQ4 - Data Input/Output
24. DQ5 - Data Input/Output
25. DQ6 - Data Input/Output
26. DQ7 - Data Input/Output
27. WE# - Write Enable
28. CE# - Chip Enable
29. OE# - Output Enable
30. RY/BY# - Ready/Busy Status
31. WP# - Write Protect
32. VCC - Power Supply

Functional Features

• Non-volatile memory: Retains data even when power is removed
• High-density storage: 4 Megabits of memory capacity
• High-speed access: Access time of 70 ns allows for quick data retrieval
• Parallel interface: Allows for efficient data transfer

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data persistence - High-density storage enables large amounts of data to be stored - High-speed access allows for fast data retrieval - Parallel interface facilitates efficient data transfer

Disadvantages: - Limited memory size compared to newer flash memory technologies - Requires external circuitry for proper operation

Working Principles

The MT28F004B3VG-8 T TR is based on NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of information using charge levels. When data needs to be written or read, the appropriate address is provided, and the corresponding memory cell is accessed. The non-volatile nature of the memory ensures that the stored data remains intact even when power is removed.

Detailed Application Field Plans

The MT28F004B3VG-8 T TR can be used in various applications that require non-volatile memory storage. Some potential application fields include: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT28F004B3VG-8 T TR that offer similar functionality and specifications include: - MT28F004B5VG-8 T TR - MT28F004B6VG-8 T TR - MT28F004B7VG-8 T TR - MT28F004B8VG-8 T TR

These alternative models are also NAND flash memory chips with similar memory sizes, access times, and operating characteristics.

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