MT28F400B5SG-8 TET TR

Product Overview

Category

MT28F400B5SG-8 TET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Enables quick access to data.
• Compact size: Allows for integration into small form factor devices.
• Durable: Resistant to shock, vibration, and extreme temperatures.
• Low power consumption: Optimized for battery-powered devices.

Package

MT28F400B5SG-8 TET TR is available in a surface-mount package (SMT) which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

MT28F400B5SG-8 TET TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 80 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT28F400B5SG-8 TET TR is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data inputs/outputs
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RE#: Read enable
8. WP#: Write protect
9. RY/BY#: Ready/busy status
10. VSS: Ground

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, enhancing efficiency.
• Page Program: Enables writing data in small page-sized increments, facilitating flexible data management.
• Read Operation: Provides fast and reliable access to stored data.
• Error Correction Code (ECC): Implements error detection and correction techniques to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory cells, prolonging the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Durable and resistant to environmental factors

Disadvantages

• Limited erase/write cycles
• Relatively higher cost compared to other types of memory

Working Principles

MT28F400B5SG-8 TET TR utilizes NAND flash memory technology. It stores data by trapping electric charges within floating gate transistors. When a voltage is applied, the trapped charges can be detected, allowing for data retrieval. The erase and program operations involve applying specific voltages to modify the charge levels within the floating gates.

Detailed Application Field Plans

MT28F400B5SG-8 TET TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT28F400B5SG-8 TET TR include: - Samsung K9F4G08U0D - Micron MT29F4G08ABADAWP - Toshiba TC58NVG2S0FTA00

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

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