Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Surface mount technology (SMT) package
Essence: Non-volatile memory device
Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements
The MT28F800B3WG-9 B TR has a total of 48 pins. The pin configuration is as follows:
(Note: The remaining pins are not listed for brevity)
Advantages: - Large storage capacity - Fast access speed - Low power consumption - Reliable and durable
Disadvantages: - Limited write endurance - Higher cost compared to other memory technologies
The MT28F800B3WG-9 B TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior. This charge can be retained even when power is removed, making it non-volatile. To read the stored data, the transistor's behavior is analyzed by applying appropriate voltages to the pins.
The MT28F800B3WG-9 B TR is commonly used in various electronic devices that require non-volatile data storage, such as:
Below are some alternative models that offer similar functionality:
These models have different specifications and may vary in terms of capacity, access time, or package type. It is recommended to consult the manufacturer's datasheets for detailed information.
(Note: The list of alternative models can be expanded based on availability and customer requirements)
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Sure! Here are 10 common questions and answers related to the application of MT28F800B3WG-9 B TR in technical solutions:
Q: What is the MT28F800B3WG-9 B TR? A: The MT28F800B3WG-9 B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.
Q: What is the capacity of the MT28F800B3WG-9 B TR? A: The MT28F800B3WG-9 B TR has a capacity of 8 megabytes (MB).
Q: What is the operating voltage range for the MT28F800B3WG-9 B TR? A: The MT28F800B3WG-9 B TR operates within a voltage range of 2.7V to 3.6V.
Q: What is the speed rating of the MT28F800B3WG-9 B TR? A: The MT28F800B3WG-9 B TR has a speed rating of 90 nanoseconds (ns) for random access times.
Q: What interface does the MT28F800B3WG-9 B TR use? A: The MT28F800B3WG-9 B TR uses a parallel interface.
Q: Can the MT28F800B3WG-9 B TR be used in industrial applications? A: Yes, the MT28F800B3WG-9 B TR is designed for industrial temperature ranges and can be used in various industrial applications.
Q: Is the MT28F800B3WG-9 B TR compatible with other NAND flash memory chips? A: Yes, the MT28F800B3WG-9 B TR is compatible with other NAND flash memory chips that use a similar interface and voltage range.
Q: What are some typical applications for the MT28F800B3WG-9 B TR? A: The MT28F800B3WG-9 B TR can be used in various applications such as embedded systems, automotive electronics, industrial control systems, and telecommunications equipment.
Q: Does the MT28F800B3WG-9 B TR support wear-leveling algorithms? A: Yes, the MT28F800B3WG-9 B TR supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells, increasing the lifespan of the chip.
Q: Where can I find more technical information about the MT28F800B3WG-9 B TR? A: You can refer to the datasheet provided by Micron Technology or visit their official website for detailed technical specifications and application notes related to the MT28F800B3WG-9 B TR.