MT28F800B5WG-8 B TR

Product Overview

Category

MT28F800B5WG-8 B TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Compact size
• Low power consumption
• Durable and reliable

Package

MT28F800B5WG-8 B TR comes in a small form factor package that is compatible with surface mount technology (SMT).

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT28F800B5WG-8 B TR is typically packaged in reels or trays, depending on the quantity ordered. The exact packaging and quantity can vary based on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 8 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: 8 ns

Detailed Pin Configuration

The pin configuration of MT28F800B5WG-8 B TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RY/BY# - Ready/busy status
9. WP#/ACC - Write protect or accelerated programming control
10. RP#/ACC - Reset or accelerated programming control
11. CLE - Command latch enable
12. ALE - Address latch enable

Functional Features

• High-speed data transfer
• Error correction capability
• Block erase and program operations
• Wear-leveling algorithm for extended lifespan
• Bad block management
• Power-saving features

Advantages and Disadvantages

Advantages

• Fast read and write speeds
• Large storage capacity
• Compact size
• Low power consumption
• Reliable performance
• Suitable for various electronic devices

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

MT28F800B5WG-8 B TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltage to specific memory cells.

Detailed Application Field Plans

MT28F800B5WG-8 B TR finds applications in a wide range of electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT28F800B5WG-8 B TR include: - Samsung K9GAG08U0E - Toshiba TH58NVG6D2ETA20 - Micron MT29F64G08CBABA

These models have comparable specifications and are widely used in the industry as alternatives to MT28F800B5WG-8 B TR.

In conclusion, MT28F800B5WG-8 B TR is a high-performance flash memory product with a compact form factor, suitable for various electronic devices. Its fast read and write speeds, large storage capacity, and reliability make it a popular choice in the industry. However, it is important to consider its limited endurance and relatively higher cost compared to other memory technologies.