MT29C1G12MAADAFAMD-6 E IT TR

Product Overview

Category

MT29C1G12MAADAFAMD-6 E IT TR belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Compact size
• Low power consumption

Package

The MT29C1G12MAADAFAMD-6 E IT TR is packaged in a small form factor, typically a surface mount package (SMP).

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

The MT29C1G12MAADAFAMD-6 E IT TR is typically sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb (Gigabit)
• Organization: 1G x 8
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Speed: 6 ns (nanoseconds)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29C1G12MAADAFAMD-6 E IT TR has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. RE# - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. WP# - Write protect
10. R/B# - Ready/busy

Functional Features

• High-speed data transfer
• Error correction capabilities
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan
• Bad block management

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size allows for integration into various electronic devices
• Low power consumption, making it suitable for portable devices
• Reliable data storage with error correction capabilities

Disadvantages

• Limited capacity compared to other memory technologies
• Finite lifespan due to the limited number of program/erase cycles
• Susceptible to data loss in case of power failure or improper handling

Working Principles

The MT29C1G12MAADAFAMD-6 E IT TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value.

Detailed Application Field Plans

The MT29C1G12MAADAFAMD-6 E IT TR is widely used in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29C1G12MAADAFAMD-6 E IT TR include: - MT29C1G12MAADAWAMD-6 E IT TR - MT29C1G12MAADBFAMD-6 E IT TR - MT29C1G12MAADCFAMD-6 E IT TR - MT29C1G12MAADDFAAMD-6 E IT TR

These alternative models may have different specifications, capacities, or package options, but they serve a similar purpose in data storage and retrieval.

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