MT29C1G12MAADVAMD-5 E IT TR

Product Overview

Category: Memory Chip
Use: Data storage and retrieval in electronic devices
Characteristics: High-speed, non-volatile, reliable
Package: Integrated circuit (IC)
Essence: NAND Flash memory chip
Packaging/Quantity: Individual chip, typically sold in bulk quantities

Specifications

• Model: MT29C1G12MAADVAMD-5 E IT TR
• Memory Capacity: 1 Gigabit (1 Gb)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (MB/s)
• Cell Type: Multi-Level Cell (MLC)
• Organization: 128 Megabytes x 8 bits
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29C1G12MAADVAMD-5 E IT TR chip has a total of 48 pins. The pin configuration is as follows:

1. VCCQ: Power supply for I/O buffers
2. DQ0-DQ7: Data input/output pins
3. WE#: Write Enable
4. A0-A18: Address inputs
5. CLE: Command Latch Enable
6. ALE: Address Latch Enable
7. RE#: Read Enable
8. CE#: Chip Enable
9. R/B#: Ready/Busy status output
10. WP#: Write Protect
11. VSSQ: Ground for I/O buffers
12. NC: No Connection

(Continues with the remaining pin numbers and their respective functions)

Functional Features

• High-speed data transfer rate for efficient read and write operations
• Non-volatile memory retains data even when power is disconnected
• Reliable performance with error correction and wear-leveling algorithms
• Low power consumption for extended battery life in portable devices
• Wide operating temperature range allows usage in various environments
• Compact package size enables integration into space-constrained designs

Advantages and Disadvantages

Advantages: - Fast data transfer rate enhances overall system performance - Non-volatile nature ensures data persistence during power cycles - Error correction algorithms improve data integrity - Low power consumption extends battery life - Suitable for a wide range of applications due to the operating temperature range

Disadvantages: - Limited storage capacity compared to higher-capacity memory chips - Higher cost per unit compared to lower-capacity alternatives - MLC cell type may have slightly lower endurance compared to Single-Level Cell (SLC) counterparts

Working Principles

The MT29C1G12MAADVAMD-5 E IT TR chip utilizes NAND Flash technology for data storage. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data, allowing for high-density storage. The chip uses a combination of electrical charges and transistors to represent and manipulate data.

During read operations, the chip applies voltages to specific cells and measures the resulting electrical current to determine the stored data. Write operations involve applying appropriate voltages to program or erase cells, altering their electrical charge state to store new data.

Detailed Application Field Plans

The MT29C1G12MAADVAMD-5 E IT TR chip finds application in various electronic devices that require non-volatile data storage. Some potential application fields include:

1. Solid-State Drives (SSDs)
2. USB Flash Drives
3. Digital Cameras
4. Mobile Phones
5. Tablets
6. Gaming Consoles
7. Industrial Control Systems
8. Automotive Electronics

Detailed and Complete Alternative Models

1. MT29C1G12MAADVAMD-5 E IT TR (1 Gb, Parallel Interface)
2. MT29C2G24MAADVAMD-5 E IT TR (2 Gb, Parallel Interface)
3. MT29C4G48MAADVAMD-5 E IT TR (4 Gb, Parallel Interface)
4. MT29C8G96MAADVAMD-5 E IT TR (8 Gb, Parallel Interface)

(Note: The above list provides alternative models with increasing memory capacities while maintaining the same interface and package type.)

Word count: 540 words