Micron Technology Inc.
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MT29F128G08AMCABH2-10Z:A

MT29F128G08AMCABH2-10Z:A

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High capacity
    • Fast read/write speeds
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory
  • Packaging/Quantity: Single unit

Specifications

  • Model: MT29F128G08AMCABH2-10Z:A
  • Capacity: 128GB
  • Interface: NAND
  • Voltage: 3.3V
  • Speed: 10 nanoseconds
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

  1. VCC
  2. GND
  3. A0
  4. A1
  5. A2
  6. A3
  7. A4
  8. A5
  9. A6
  10. A7
  11. A8
  12. A9
  13. A10
  14. A11
  15. A12
  16. A13
  17. A14
  18. A15
  19. A16
  20. A17
  21. A18
  22. A19
  23. A20
  24. A21
  25. A22
  26. A23
  27. A24
  28. A25
  29. A26
  30. A27
  31. A28
  32. A29
  33. A30
  34. A31
  35. RE#
  36. WE#
  37. CLE
  38. ALE
  39. WP#
  40. R/B#
  41. CE#
  42. DQ0
  43. DQ1
  44. DQ2
  45. DQ3
  46. DQ4
  47. DQ5
  48. DQ6
  49. DQ7

Functional Features

  • High-speed data transfer
  • Reliable and durable
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient storage utilization

Advantages

  • Large storage capacity
  • Fast read/write speeds
  • Low power consumption
  • Compact form factor
  • Suitable for various applications

Disadvantages

  • Limited write endurance
  • Higher cost compared to traditional storage devices
  • Susceptible to data loss in case of power failure

Working Principles

MT29F128G08AMCABH2-10Z:A is based on NAND flash memory technology. It stores data in a grid of memory cells, which are organized into pages and blocks. The device uses electrical charges to represent binary data (0s and 1s). When reading data, the charges are measured to determine the stored information. Writing involves applying voltage to specific memory cells to change their charge state.

Detailed Application Field Plans

  • Solid-state drives (SSDs)
  • USB flash drives
  • Memory cards
  • Embedded systems
  • Consumer electronics
  • Industrial automation

Detailed and Complete Alternative Models

  1. MT29F256G08CMCABH2-10Z:A - 256GB capacity, same specifications as MT29F128G08AMCABH2-10Z:A
  2. MT29F64G08CBAAA:K - 64GB capacity, lower speed (20 nanoseconds), same package and interface as MT29F128G08AMCABH2-10Z:A
  3. MT29F512G08CUABA:R - 512GB capacity, higher speed (5 nanoseconds), same package and interface as MT29F128G08AMCABH2-10Z:A

Note: These alternative models are provided for reference and may have different characteristics or availability.

Total words: 388

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F128G08AMCABH2-10Z:A v technických řešeních

  1. Question: What is the capacity of the MT29F128G08AMCABH2-10Z:A?
    Answer: The MT29F128G08AMCABH2-10Z:A has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the voltage range supported by this memory device?
    Answer: The MT29F128G08AMCABH2-10Z:A supports a voltage range of 2.7V to 3.6V.

  3. Question: What is the operating temperature range for this memory device?
    Answer: The MT29F128G08AMCABH2-10Z:A has an operating temperature range of -40°C to +85°C.

  4. Question: What is the interface used by this memory device?
    Answer: The MT29F128G08AMCABH2-10Z:A uses a standard NAND Flash interface.

  5. Question: Does this memory device support hardware data protection features?
    Answer: Yes, the MT29F128G08AMCABH2-10Z:A supports hardware data protection features like ECC and bad block management.

  6. Question: Can this memory device be used in automotive applications?
    Answer: Yes, the MT29F128G08AMCABH2-10Z:A is designed to meet the requirements of automotive applications.

  7. Question: What is the maximum read and write speed of this memory device?
    Answer: The MT29F128G08AMCABH2-10Z:A has a maximum read speed of 50 megabytes per second and a maximum write speed of 20 megabytes per second.

  8. Question: Is this memory device compatible with other NAND Flash devices?
    Answer: Yes, the MT29F128G08AMCABH2-10Z:A is compatible with other NAND Flash devices that use the same interface and voltage range.

  9. Question: Can this memory device be used in industrial control systems?
    Answer: Yes, the MT29F128G08AMCABH2-10Z:A is suitable for use in industrial control systems due to its wide temperature range and reliability features.

  10. Question: Does this memory device support wear-leveling algorithms?
    Answer: Yes, the MT29F128G08AMCABH2-10Z:A supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells, increasing the lifespan of the device.